Datasheet > IRLZ24NSTRR

IRLZ24NSTRR

更新时间： 2024-09-14 19:27:31

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
10页	197K
描述
Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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IRLZ24NSTRR 数据手册

PD - 91358E

IRLZ24NS/L

HEXFET^®Power MOSFET

l Logic-Level Gate Drive

l Advanced Process Technology

l SurfaceMount(IRLZ24NS)

l Low-profilethrough-hole(IRLZ24NL)

l 175°C Operating Temperature

l Fast Switching

V_DSS= 55V

R_DS(on)= 0.06Ω

l Fully Avalanche Rated

Description

I_D= 18A

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedizeddevicedesignthatHEXFETPowerMOSFETs

arewellknownfor,providesthedesignerwithanextremely

efficient and reliable device for use in a wide variety of

applications.

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D²Pak is suitable for high current applications because of

its low internal connection resistance and can dissipate

up to 2.0W in a typical surface mount application.

Thethrough-holeversion(IRLZ24NL)isavailableforlow-

profileapplications.

T O -262

Pak

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10Vꢀ

Pulsed Drain Current ꢀ

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

3.8

Power Dissipation

Linear Derating Factor

0.30

±16

W/°C

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energyꢀ

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ꢀ

Operating Junction and

4.5

5.0

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Junction-to-Ambient ( PCB Mounted,steady-state)**

Typ.

–––

Max.

3.3

Units

R_θJC

R_θJA

°C/W

–––

5/12/98

12 3 4 5 6 7...10

中文翻译

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与IRLZ24NSTRR相关器件

型号	品牌	获取价格	描述	数据表
IRLZ24NSTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Met
IRLZ24PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRLZ24PBF	VISHAY	获取价格	Power MOSFET
IRLZ24S	VISHAY	获取价格	Power MOSFET
IRLZ24S	INFINEON	获取价格	HEXFET POWER MOSFET
IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L	VISHAY	获取价格	Power MOSFET
IRLZ24SPBF	INFINEON	获取价格	Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal
IRLZ24SPBF	VISHAY	获取价格	TRANSISTOR 17 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, SMD-220, 3 PIN, FE
IRLZ24STRL	INFINEON	获取价格	HEXFET POWER MOSFET
IRLZ24STRR	INFINEON	获取价格	Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal