Datasheet > IRLZ24NSL

IRLZ24NSL

更新时间： 2024-11-02 01:16:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	202K
描述
Advanced Process Technology

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中文翻译

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数据手册

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IRLZ24NSL 数据手册

PD - 91358E

IRLZ24NS/L

HEXFET^®Power MOSFET

l Logic-Level Gate Drive

l Advanced Process Technology

l SurfaceMount(IRLZ24NS)

l Low-profilethrough-hole(IRLZ24NL)

l 175°C Operating Temperature

l Fast Switching

V_DSS= 55V

R_DS(on)= 0.06Ω

l Fully Avalanche Rated

Description

I_D= 18A

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedizeddevicedesignthatHEXFETPowerMOSFETs

arewellknownfor,providesthedesignerwithanextremely

efficient and reliable device for use in a wide variety of

applications.

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D²Pak is suitable for high current applications because of

its low internal connection resistance and can dissipate

up to 2.0W in a typical surface mount application.

Thethrough-holeversion(IRLZ24NL)isavailableforlow-

profileapplications.

T O -262

Pak

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10Vꢀ

Pulsed Drain Current ꢀ

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

3.8

Power Dissipation

Linear Derating Factor

0.30

±16

W/°C

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energyꢀ

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ꢀ

Operating Junction and

4.5

5.0

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Junction-to-Ambient ( PCB Mounted,steady-state)**

Typ.

–––

Max.

3.3

Units

R_θJC

R_θJA

°C/W

–––

5/12/98

12 3 4 5 6 7...11

中文翻译

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与IRLZ24NSL相关器件

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IRLZ24NSPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRLZ24NSTRL	INFINEON	获取价格	Advanced Process Technology
IRLZ24NSTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Met
IRLZ24NSTRR	INFINEON	获取价格	Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Met
IRLZ24NSTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Met
IRLZ24PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRLZ24PBF	VISHAY	获取价格	Power MOSFET
IRLZ24S	VISHAY	获取价格	Power MOSFET
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