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IRLR7821PBF PDF预览

IRLR7821PBF

更新时间: 2024-11-27 04:23:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
12页 321K
描述
HEXFET㈢ Power MOSFET

IRLR7821PBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LEAD FREE, DPAK-3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.12
Base Number Matches:1

IRLR7821PBF 数据手册

 浏览型号IRLR7821PBF的Datasheet PDF文件第2页浏览型号IRLR7821PBF的Datasheet PDF文件第3页浏览型号IRLR7821PBF的Datasheet PDF文件第4页浏览型号IRLR7821PBF的Datasheet PDF文件第5页浏览型号IRLR7821PBF的Datasheet PDF文件第6页浏览型号IRLR7821PBF的Datasheet PDF文件第7页 
PD - 95091B  
IRLR7821PbF  
IRLU7821PbF  
HEXFET® Power MOSFET  
Applications  
VDSS RDS(on) max  
Qg  
l High Frequency Synchronous Buck  
Converters for Computer Processor Power  
l High Frequency Isolated DC-DC  
Converters with Synchronous Rectification  
for Telecom and Industrial Use  
l Lead-Free  
10m  
30V  
10nC  
Benefits  
l Very Low RDS(on) at 4.5V VGS  
l Ultra-Low Gate Impedance  
l Fully Characterized Avalanche Voltage  
and Current  
D-Pak  
IRLR7821PbF  
I-Pak  
IRLU7821PbF  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Max.  
30  
Units  
V
VDS  
V
Gate-to-Source Voltage  
± 20  
65  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
@ TC = 25°C  
@ TC = 100°C  
D
D
47  
A
260  
75  
DM  
P
P
@TC = 25°C  
@TC = 100°C  
Maximum Power Dissipation  
Maximum Power Dissipation  
D
D
W
37.5  
Linear Derating Factor  
Operating Junction and  
0.50  
-55 to + 175  
W/°C  
°C  
T
J
T
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
2.0  
Units  
Rθ  
Rθ  
Rθ  
Junction-to-Case  
JC  
JA  
JA  
Junction-to-Ambient (PCB Mount)  
Junction-to-Ambient  
50  
°C/W  
110  
Notes  through are on page 11  
www.irf.com  
1
10/02/06  

IRLR7821PBF 替代型号

型号 品牌 替代类型 描述 数据表
IRLR7821TRLPBF INFINEON

类似代替

Power Field-Effect Transistor, 65A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
IRLR7821 INFINEON

功能相似

HEXFET Power MOSFET

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