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IRLR7821CPBF

更新时间： 2024-11-27 04:23:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	320K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册

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IRLR7821CPBF 数据手册

PD - 96056

IRLR7821CPbF

IRLU7821CPbF

HEXFET^®Power MOSFET

Applications

l High Frequency Synchronous Buck

Converters for Computer Processor Power

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

l Lead-Free

V_DSSR_DS(on)max

10nC

10m

30V

Benefits

l Very Low RDS(on) at 4.5V V_GS

l Ultra-Low Gate Impedance

l Fully Characterized Avalanche Voltage

and Current

D-Pak

IRLR7821CPbF

I-Pak

IRLU7821CPbF

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Max.

Units

V_DS

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_C= 25°C

@ T_C= 100°C

260

@T_C= 25°C

@T_C= 100°C

Maximum Power Dissipation

37.5

Linear Derating Factor

Operating Junction and

0.50

-55 to + 175

W/°C

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Typ.

–––

Max.

2.0

Units

R_θ

Junction-to-Case

Junction-to-Ambient (PCB Mount)

Junction-to-Ambient

°C/W

110

Notes through ꢀ are on page 11

www.irf.com

10/2/06

12 3 4 5 6 7...11

中文翻译

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