Datasheet > IRLR7811WTRRPBF

IRLR7811WTRRPBF

更新时间： 2024-11-28 09:32:59

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
10页	186K
描述
Power Field-Effect Transistor, 30A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

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数据手册

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IRLR7811WTRRPBF 数据手册

PD - 95778A

SMPS MOSFET

IRLR7811WPbF

HEXFET^®Power MOSFET

Applications

l High Frequency Synchronous Buck

Converters for Computer Processor Power

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

l Lead-Free

V_DSS

30V

R_DS(on)max

Q_g

19nC

10.5mΩ

Benefits

l Very Low RDS(on) at 4.5V V_GS

l Ultra-Low Gate Impedance

l Fully Characterized Avalanche Voltage

and Current

D-Pak

IRLR7811W

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

260

P_D@T_C= 25°C

P_D@T_A= 100°C

Power Dissipation

Power Dissipation*

1.5

W/°C

Linear Derating Factor

0.48

V_GS

T_J

Gate-to-Source Voltage

± 12

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

2.1

Units

R_θJC

R_θJA

Junction-to-Ambient (PCB mount)*

Junction-to-Ambient

°C/W

110

Notes through are on page 9

www.irf.com

1/17/05

12 3 4 5 6 7...10

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