IRLR2908TRL

更新时间： 2024-11-05 12:58:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
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11页	206K
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IRLR2908TRL 数据手册

PD - 94501

IRLR2908

AUTOMOTIVE MOSFET

IRLU2908

HEXFET^®Power MOSFET

Features

Advanced Process Technology

V_DSS= 80V

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

R_DS(on)= 28mΩ

Repetitive Avalanche Allowed up to Tjmax

I_D= 30A

Description

Specifically designed for Automotive applications, this HEXFET ® Power MOSFET

utilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersilicon

area.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperating

temperature, low RθJC, fast switching speed and improved repetitive avalanche rating.

Thesefeaturescombinetomakethisdesignanextremelyefficientandreliabledevicefor

use in Automotive applications and a wide variety of other applications.\

The D-Pak is designed for surface mounting using vapor phase, infrared, or wave

solderingtechniques. Thestraightleadversion(IRFUseries)isforthrough-holemounting

applications. Powerdissipationlevelsupto1.5wattsarepossibleintypicalsurfacemount

applications.

I-Pak

IRLU2908

D-Pak

IRLR2908

Absolute Maximum Ratings

Parameter

Max.

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

@ T_C= 25°C

@ T_C= 100°C

@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (See Fig. 9)

(Package Limited)

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

150

120

@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

0.77

± 16

W/°C

E_AS

180

250

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

_AS(tested)

Avalanche Current

I_AR

E_AR

See Fig.12a,12b,15,16

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

dv/dt

2.3

V/ns

°C

-55 to + 175

Storage Temperature Range

STG

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Thermal Resistance

Parameter

Typ.

–––

Max.

1.3

Units

R_θJC

R_θJA

Junction-to-Case

°C/W

Junction-to-Ambient (PCB Mount)

Junction-to-Ambient

110

www.irf.com

02/13/03

12 3 4 5 6 7...11

中文翻译

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