Datasheet > IRLR120, IRLU120, SiHLR120, SiHLU120

IRLR120, IRLU120, SiHLR120, SiHLU120

更新时间： 2024-11-26 14:55:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
13页	1059K
描述
Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRLR120, IRLU120, SiHLR120, SiHLU120 数据手册

浏览型号IRLR120, IRLU120, SiHLR120, SiHLU120的Datasheet PDF文件第2页

浏览型号IRLR120, IRLU120, SiHLR120, SiHLU120的Datasheet PDF文件第3页

浏览型号IRLR120, IRLU120, SiHLR120, SiHLU120的Datasheet PDF文件第4页

浏览型号IRLR120, IRLU120, SiHLR120, SiHLU120的Datasheet PDF文件第5页

浏览型号IRLR120, IRLU120, SiHLR120, SiHLU120的Datasheet PDF文件第6页

IRLR120, IRLU120, SiHLR120, SiHLU120

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt rating

DPAK

(TO-252)

IPAK

(TO-251)

• Repetitive avalanche rated

• Surface-mount (IRLR120, SiHLR120)

• Straight lead (IRLU120, SiHLU120)

• Available in tape and reMel

Available

• Logic-level gate drive

• R_DS(on)specified at V_GS= 4 V and 5 V

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

DESCRIPTION

PRODUCT SUMMARY

V_DS(V)

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRLU, SiHLU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface-mount applications.

100

R_DS(on)(Ω)

V_GS= 5.0 V

0.27

Q_g(Max.) (nC)

3.0

_gs(nC)

_gd(nC)

7.1

Configuration

Single

ORDERING INFORMATION

Package

DPAK (TO-252)

SiHLR120TRR-GE3

IPAK (TO-251)

SiHLR120-GE3

SiHLR120TRL-GE3

IRLR120TRLPbF-BE3

IRLR120TRLPbF ^a

SiHLR120TR-GE3

IRLR120TRPbF-BE3

IRLR120TRPbF ^a

SiHLU120-GE3

Lead (Pb)-free and

halogen-free

IRLR120PbF-BE3

IRLR120PbF

Lead (Pb)-free

IRLR120TRRPbF ^a

Note

a. See device orientation

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

100

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

7.7

Continuous drain current

V_GSat 5 V

I_D

T_C= 100 °C

4.9

Pulsed drain current ^a

I_DM

Linear derating factor

0.33

0.020

210

W/°C

Linear derating factor (PCB mount) ^e

Single pulse avalanche energy ^b

Repetitive avalanche current ^a

E_AS

I_AR

7.7

Repetitive avalanche energy ^a

E_AR

4.2

Maximum power dissipation

_C= 25 °C

P_D

V/ns

°C

Maximum power dissipation (PCB mount) ^e

Peak diode recovery dV/dt ^c

T_A= 25 °C

2.5

dV/dt

5.5

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^d

T_J, T_stg

-55 to +150

260

For 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. V_DD= 25 V, starting T_J= 25 °C, L = 5.3 mH, R_g= 25 Ω, I_AS= 7.7 A (see fig. 12)

c. I_SD≤ 9.2 A, dI/dt ≤ 110 A/μs, V_DD≤ V_DS, T_J≤ 150 °C

d. 1.6 mm from case

e. When mounted on 1" square PCB (FR-4 or G-10 material)

S21-0818-Rev. F, 02-Aug-2021

Document Number: 91324

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...13

中文翻译

下载PDF

与IRLR120, IRLU120, SiHLR120, SiHLU120相关器件

型号	品牌	获取价格	描述	数据表
IRLR120A	FAIRCHILD	获取价格	ADVANCED POWER MOSFET
IRLR120ATF	FAIRCHILD	获取价格	Power Field-Effect Transistor, 8.4A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Me
IRLR120ATM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 8.4A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Me
IRLR120N	INFINEON	获取价格	Power MOSFET(Vdss=100V, Rds(on)=0.185ohm, Id=10A)
IRLR120NPBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRLR120NTR	INFINEON	获取价格	Advanced Process Technology
IRLR120NTR	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:100V;持续漏极电流（Id）（在25°C
IRLR120NTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Me
IRLR120NTRPBF	INFINEON	获取价格	Surface Mount (IRLR120N)
IRLR120PBF	INFINEON	获取价格	HEXFET Power MOSFET

与IRLR120, IRLU120, SiHLR120, SiHLU120相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

40
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

32
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

60
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

56

产品中心

服务支持

精选活动

关于我们

帮助中心

IRLR120, IRLU120, SiHLR120, SiHLU120

IRLR120, IRLU120, SiHLR120, SiHLU120 数据手册

与IRLR120, IRLU120, SiHLR120, SiHLU120相关器件

与IRLR120, IRLU120, SiHLR120, SiHLU120相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRLR120, IRLU120, SiHLR120, SiHLU120

IRLR120, IRLU120, SiHLR120, SiHLU120 数据手册

与IRLR120, IRLU120, SiHLR120, SiHLU120相关器件

与IRLR120, IRLU120, SiHLR120, SiHLU120相关文章

您还可以找

您在本页遇到什么问题？