Datasheet > IRLR120, IRLU120, SiHLR120, SiHLU120

IRLR120, IRLU120, SiHLR120, SiHLU120

更新时间： 2023-12-06 20:09:45

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
13页	1059K
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Power MOSFET

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IRLR120, IRLU120, SiHLR120, SiHLU120 数据手册

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IRLR120, IRLU120, SiHLR120, SiHLU120

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt rating

DPAK

(TO-252)

IPAK

(TO-251)

• Repetitive avalanche rated

• Surface-mount (IRLR120, SiHLR120)

• Straight lead (IRLU120, SiHLU120)

• Available in tape and reMel

Available

• Logic-level gate drive

• R_DS(on)specified at V_GS= 4 V and 5 V

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

DESCRIPTION

PRODUCT SUMMARY

V_DS(V)

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRLU, SiHLU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface-mount applications.

100

R_DS(on)(Ω)

V_GS= 5.0 V

0.27

Q_g(Max.) (nC)

3.0

_gs(nC)

_gd(nC)

7.1

Configuration

Single

ORDERING INFORMATION

Package

DPAK (TO-252)

SiHLR120TRR-GE3

IPAK (TO-251)

SiHLR120-GE3

SiHLR120TRL-GE3

IRLR120TRLPbF-BE3

IRLR120TRLPbF ^a

SiHLR120TR-GE3

IRLR120TRPbF-BE3

IRLR120TRPbF ^a

SiHLU120-GE3

Lead (Pb)-free and

halogen-free

IRLR120PbF-BE3

IRLR120PbF

Lead (Pb)-free

IRLR120TRRPbF ^a

Note

a. See device orientation

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

100

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

7.7

Continuous drain current

V_GSat 5 V

I_D

T_C= 100 °C

4.9

Pulsed drain current ^a

I_DM

Linear derating factor

0.33

0.020

210

W/°C

Linear derating factor (PCB mount) ^e

Single pulse avalanche energy ^b

Repetitive avalanche current ^a

E_AS

I_AR

7.7

Repetitive avalanche energy ^a

E_AR

4.2

Maximum power dissipation

_C= 25 °C

P_D

V/ns

°C

Maximum power dissipation (PCB mount) ^e

Peak diode recovery dV/dt ^c

T_A= 25 °C

2.5

dV/dt

5.5

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^d

T_J, T_stg

-55 to +150

260

For 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. V_DD= 25 V, starting T_J= 25 °C, L = 5.3 mH, R_g= 25 Ω, I_AS= 7.7 A (see fig. 12)

c. I_SD≤ 9.2 A, dI/dt ≤ 110 A/μs, V_DD≤ V_DS, T_J≤ 150 °C

d. 1.6 mm from case

e. When mounted on 1" square PCB (FR-4 or G-10 material)

S21-0818-Rev. F, 02-Aug-2021

Document Number: 91324

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与IRLR120, IRLU120, SiHLR120, SiHLU120相关器件

型号	品牌	获取价格	描述	数据表
IRLR120A	FAIRCHILD	获取价格	ADVANCED POWER MOSFET
IRLR120ATF	FAIRCHILD	获取价格	Power Field-Effect Transistor, 8.4A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Me
IRLR120ATM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 8.4A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Me
IRLR120N	INFINEON	获取价格	Power MOSFET(Vdss=100V, Rds(on)=0.185ohm, Id=10A)
IRLR120NPBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRLR120NTR	INFINEON	获取价格	Advanced Process Technology
IRLR120NTR	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:100V;持续漏极电流（Id）（在25°C
IRLR120NTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Me
IRLR120NTRPBF	INFINEON	获取价格	Surface Mount (IRLR120N)
IRLR120PBF	INFINEON	获取价格	HEXFET Power MOSFET

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