Datasheet > IRLML5103

IRLML5103

更新时间： 2024-06-27 12:11:27

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
6页	784K
描述
SOT-23

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中文翻译

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数据手册

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IRLML5103 数据手册

IRLML5103

P-Channel

Power MOSFET

FEATURES



GenerationV Technology

Ultra Low On-Resistance

Low Profile (<1.1mm)



Fast Switching

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.008 grams (approximate)

(

)

MAXIMUM RATINGS T_A= 25°C unless otherwise noted

Parameter

Continuous Drain Current, V_GS@ -10V

Max.

-0.76

-0.61

-4.8

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Pulsed Drain Current

Power Dissipation

P_D@T_A= 25°C

540

mW/˚C

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

4.3

± 20

V_GS

dv/dt

T_J,T_STG

R_JA

-5.0

V/ns

°C

Junction and Storage Temperature Range

Maximum Junction-to-Ambient

-55 to + 150

230

°C/W

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

-3 0 ––– –––

––– -0.029 ––– V/°C Reference to 25°C, I_D= -1mA

Conditions

V_(BR)DSS

Drain-to-Source Breakdown Voltage

V_GS= 0V, I_D= -250µA

V_(BR)DSS/T_JBreakdown Voltage Temp. Coefficient

––– ––– 0.60

––– ––– 1.0

-1.0 ––– –––

0.44 ––– –––

––– ––– -1.0

––– ––– -25

––– ––– -100

––– ––– 100

V_GS= -10V, I_D= -0.60A

V_GS= -4.5V, I_D= -0.30A

V_DS= V_GS, I_D= -250µA

V_DS= -10V, I_D= -0.30A

V_DS= -24V, V_GS= 0V

V_DS= -24V, V_GS= 0V, T_J= 125°C

V_GS= -20V

R_DS(ON)

Static Drain-to-Source On-Resistance



V_GS(th)

g_fs

Gate Threshold Voltage

Forward Transconductance

I_DSS

I_GSS

Drain-to-Source Leakage Current

µA

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

V_GS= 20V

Q_g

––– 3.4

5.1

I_D= -0.60A

Q_gs

Q_gd

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

––– 0.52 0.78

nC V_DS= -24V

V_GS= -10V, See Fig. 6 and 9

––– 1.1

––– 10

1.7

–––

V_DD= -15V

t_d(on)

t_r

I_D= -0.60A

––– 8.2 –––

t_d(off)

R_G= 6.2

Turn-Off Delay Time

Fall Time

––– 23

––– 16

––– 75

––– 37

––– 18

–––

t_f

R_D= 25 See Fig. 10

V_GS= 0V

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

V_DS= -25V

Reverse Transfer Capacitance

ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter

Continuous Source Current

(Body Diode)

Min. Typ. Max. Units

Conditions

MOSFET symbol

I_S

––– ––– -0.54

showing the

integral reverse

Pulsed Source Current

I_SM

––– ––– -4.8

(Body Diode)

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

––– ––– -1.2

T_J= 25°C, I_S= -0.60A, V_GS= 0V

T_J= 25°C, I_F= -0.60A

––– 26

––– 20

Q_rr

di/dt = 100A/µs

Notes:

max. junction temperature. ( See fig. 11 )

_SD -0.60A, di/dt  110A/µs, V_DD V_(BR)DSS

T_J 150°C

Pulse width  300 µs duty cycle  2%.

;

Repetitive rating pulse width limited by

;

Surface mounted on FR-4 board, t  5sec.

1 / 6

E-mail:hkt@heketai.com

12 3 4 5 6

中文翻译

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