IRLML5103
P-Channel
Power MOSFET
FEATURES
GenerationV Technology
Ultra Low On-Resistance
Low Profile (<1.1mm)
Fast Switching
SOT-23
MECHANICAL DATA
Case: SOT-23
Case Material: Molded Plastic. UL flammability
Classification Rating: 94V-0
Weight: 0.008 grams (approximate)
(
)
MAXIMUM RATINGS TA = 25°C unless otherwise noted
Parameter
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Max.
-0.76
-0.61
-4.8
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
A
Pulsed Drain Current
Power Dissipation
PD @TA = 25°C
540
mW
mW/˚C
V
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
4.3
± 20
VGS
dv/dt
TJ, TSTG
RJA
-5.0
V/ns
°C
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
-55 to + 150
230
°C/W
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-3 0 ––– –––
––– -0.029 ––– V/°C Reference to 25°C, ID = -1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = -250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
––– ––– 0.60
––– ––– 1.0
-1.0 ––– –––
0.44 ––– –––
––– ––– -1.0
––– ––– -25
––– ––– -100
––– ––– 100
VGS = -10V, ID = -0.60A
VGS = -4.5V, ID = -0.30A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -0.30A
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = -20V
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
Qg
––– 3.4
5.1
ID = -0.60A
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 0.52 0.78
nC VDS = -24V
VGS = -10V, See Fig. 6 and 9
––– 1.1
––– 10
1.7
–––
VDD = -15V
td(on)
tr
ID = -0.60A
––– 8.2 –––
ns
td(off)
RG = 6.2
Turn-Off Delay Time
Fall Time
––– 23
––– 16
––– 75
––– 37
––– 18
–––
–––
–––
–––
–––
tf
RD = 25 See Fig. 10
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
pF
VDS = -25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
––– ––– -0.54
A
showing the
integral reverse
G
Pulsed Source Current
ISM
––– ––– -4.8
(Body Diode)
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– -1.2
V
TJ = 25°C, IS = -0.60A, VGS = 0V
TJ = 25°C, IF = -0.60A
––– 26
––– 20
39
30
ns
nC
Qrr
di/dt = 100A/µs
Notes:
max. junction temperature. ( See fig. 11 )
SD -0.60A, di/dt 110A/µs, VDD V(BR)DSS
,
TJ 150°C
Pulse width 300 µs duty cycle 2%.
;
Repetitive rating pulse width limited by
I
;
Surface mounted on FR-4 board, t 5sec.
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