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IRLML5103

更新时间: 2024-11-19 18:09:23
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合科泰 - HOTTECH /
页数 文件大小 规格书
6页 784K
描述
SOT-23

IRLML5103 数据手册

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IRLML5103  
P-Channel  
Power MOSFET  
FEATURES  
GenerationV Technology  
Ultra Low On-Resistance  
Low Profile (<1.1mm)  
Fast Switching  
SOT-23  
MECHANICAL DATA  
Case: SOT-23  
Case Material: Molded Plastic. UL flammability  
Classification Rating: 94V-0  
Weight: 0.008 grams (approximate)  
(
)
MAXIMUM RATINGS TA = 25°C unless otherwise noted  
Parameter  
Continuous Drain Current, VGS @ -10V  
Continuous Drain Current, VGS @ -10V  
Max.  
-0.76  
-0.61  
-4.8  
Units  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
A
Pulsed Drain Current  
Power Dissipation  

PD @TA = 25°C  
540  
mW  
mW/˚C  
V
Linear Derating Factor  
Gate-to-Source Voltage  
Peak Diode Recovery dv/dt  
4.3  
± 20  
VGS  
dv/dt  
TJ, TSTG  
RJA  
-5.0  
V/ns  
°C  
‚
Junction and Storage Temperature Range  
Maximum Junction-to-Ambient  
-55 to + 150  
230  
°C/W  
„
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
-3 0 ––– –––  
––– -0.029 ––– V/°C Reference to 25°C, ID = -1mA  
Conditions  
V(BR)DSS  
Drain-to-Source Breakdown Voltage  
V
VGS = 0V, ID = -250µA  
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient  
––– ––– 0.60  
––– ––– 1.0  
-1.0 ––– –––  
0.44 ––– –––  
––– ––– -1.0  
––– ––– -25  
––– ––– -100  
––– ––– 100  
VGS = -10V, ID = -0.60A ƒ  
VGS = -4.5V, ID = -0.30A ƒ  
VDS = VGS, ID = -250µA  
VDS = -10V, ID = -0.30A  
VDS = -24V, VGS = 0V  
VDS = -24V, VGS = 0V, TJ = 125°C  
VGS = -20V  
RDS(ON)  
Static Drain-to-Source On-Resistance  
VGS(th)  
gfs  
Gate Threshold Voltage  
V
S
Forward Transconductance  
IDSS  
IGSS  
Drain-to-Source Leakage Current  
µA  
nA  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Total Gate Charge  
VGS = 20V  
Qg  
––– 3.4  
5.1  
ID = -0.60A  
Qgs  
Qgd  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Turn-On Delay Time  
Rise Time  
––– 0.52 0.78  
nC VDS = -24V  
VGS = -10V, See Fig. 6 and 9 ƒ  
––– 1.1  
––– 10  
1.7  
–––  
VDD = -15V  
td(on)  
tr  
ID = -0.60A  
––– 8.2 –––  
ns  
td(off)  
RG = 6.2  
Turn-Off Delay Time  
Fall Time  
––– 23  
––– 16  
––– 75  
––– 37  
––– 18  
–––  
–––  
–––  
–––  
–––  
tf  
RD = 25 See Fig. 10  
VGS = 0V  
ƒ
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
pF  
VDS = -25V  
Reverse Transfer Capacitance  
ƒ = 1.0MHz, See Fig. 5  
Source-Drain Ratings and Characteristics  
Parameter  
Continuous Source Current  
(Body Diode)  
Min. Typ. Max. Units  
Conditions  
MOSFET symbol  
D
IS  
––– ––– -0.54  
A
showing the  
integral reverse  
G
Pulsed Source Current  
ISM  
––– ––– -4.8  
(Body Diode)  
p-n junction diode.  

S
VSD  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
––– ––– -1.2  
V
TJ = 25°C, IS = -0.60A, VGS = 0V  
TJ = 25°C, IF = -0.60A  
ƒ
––– 26  
––– 20  
39  
30  
ns  
nC  
Qrr  
di/dt = 100A/µs  
ƒ
Notes:  
max. junction temperature. ( See fig. 11 )  
SD -0.60A, di/dt 110A/µs, VDD V(BR)DSS  
,
TJ 150°C  
Pulse width 300 µs duty cycle 2%.  
;
Repetitive rating pulse width limited by  
I

‚
ƒ
;
„ Surface mounted on FR-4 board, t 5sec.  
1 / 6  
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD  
E-mail:hkt@heketai.com  

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