Datasheet > IRLML2803TR

IRLML2803TR

更新时间： 2024-11-18 17:15:39

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	399K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:1.2A;Vgs(th)(V):±20;漏源导通电阻:250mΩ@10V;漏源导通电阻:400mΩ@4.5V

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRLML2803TR 数据手册

UMW

IRLML2803

Features

SOT–23

VDS (V) = 30V

250m

400m

(V_GS

RDS(ON)

10V)

4.5V)

Description

Generation VTechnology UltraLowOn-

Low Profile (<1.1mm)

Resistance

1. GATE

2. SOURCE

3. DRAIN

Available in Tape and Reel

Fast Switching

Lead-Free

RoHS CompliantHalogen-Free

Absolute Maximum Ratings

Parameter

Max.

Units

@ T = 25°C

1.2

0.93

7.3

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 70°C

@T = 25°C

540

Power Dissipation

Linear Derating Factor

4.3

±20

mW/°C

Gate-to-Source Voltage

E_AS

3.9

Single Pulse Avalanche Energy

Peak diode Recovery dv/dt

Junction and Storage Temperature Range

5.0

dv/dt

V/ns

°C

-55 to + 150

J , STG

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Typ.

–––

Max.

230

Units

°C/W

R_θJA

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7

中文翻译

下载PDF

与IRLML2803TR相关器件

型号	品牌	获取价格	描述	数据表
IRLML2803TRPBF	INFINEON	获取价格	Generation V Technology, Ultra Low On-Resistance
IRLML5103	INFINEON	获取价格	Power MOSFET(Vdss=-30V, Rds(on)=0.60ohm)
IRLML5103	HOTTECH	获取价格	SOT-23
IRLML5103GPBF	INFINEON	获取价格	HEXFET POWER MOSFET
IRLML5103GTRPBF	INFINEON	获取价格	Small Signal Field-Effect Transistor, 0.76A I(D), 30V, 1-Element, P-Channel, Silicon, Meta
IRLML5103PBF	INFINEON	获取价格	HEXFET-R POWER MOSFET
IRLML5103PBF_11	INFINEON	获取价格	Lead-Free, Fast Switching, Available in Tape and Reel
IRLML5103PBF-1	INFINEON	获取价格	Compatible with Existing Surface Mount Techniques
IRLML5103PBF-1_15	INFINEON	获取价格	Compatible with Existing Surface Mount Techniques
IRLML5103TR	INFINEON	获取价格	Small Signal Field-Effect Transistor, 0.76A I(D), 30V, 1-Element, P-Channel, Silicon, Meta