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IRLML2803PBF-1_15 PDF预览

IRLML2803PBF-1_15

更新时间: 2024-11-19 01:20:35
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 247K
描述
Compatible with Existing Surface Mount Techniques

IRLML2803PBF-1_15 数据手册

 浏览型号IRLML2803PBF-1_15的Datasheet PDF文件第2页浏览型号IRLML2803PBF-1_15的Datasheet PDF文件第3页浏览型号IRLML2803PBF-1_15的Datasheet PDF文件第4页浏览型号IRLML2803PBF-1_15的Datasheet PDF文件第5页浏览型号IRLML2803PBF-1_15的Datasheet PDF文件第6页浏览型号IRLML2803PBF-1_15的Datasheet PDF文件第7页 
IRLML2803PbF-1  
HEXFET® Power MOSFET  
VDS  
30  
0.25  
3.3  
V
Ω
RDS(on) max  
(@VGS = 10V)  
Qg (typical)  
ID  
G
S
1
2
nC  
A
3
D
1.2  
(@TA = 25°C)  
Micro3™  
Features  
Benefits  
Industry-standard pinout SOT-23 Package  
Compatible with Existing Surface Mount Techniques  
RoHS Compliant, Halogen-Free  
Multi-Vendor Compatibility  
Easier Manufacturing  
Environmentally Friendlier  
Increased Reliability  
MSL1, Industrial qualification  
Standard Pack  
Base Part Number  
Package Type  
Micro3 (SOT-23)  
Orderable Part Number  
Form  
Quantity  
IRLML2803TRPbF-1  
Tape and Reel  
3000  
IRLML2803TRPbF-1  
Absolute Maximum Ratings  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Max.  
Units  
A
I
I
I
@ T = 25°C  
A
1.2  
0.93  
7.3  
D
D
@ T = 70°C  
A
DM  
P
@T = 25°C  
A
540  
mW  
Power Dissipation  
D
Linear Derating Factor  
4.3  
±20  
mW/°C  
V
V
Gate-to-Source Voltage  
GS  
EAS  
3.9  
mJ  
Single Pulse Avalanche Energy  
Peak diode Recovery dv/dt  
Junction and Storage Temperature Range  
5.0  
dv/dt  
V/ns  
°C  
T
T
-55 to + 150  
J , STG  
Thermal Resistance  
Parameter  
Maximum Junction-to-Ambient  
Typ.  
–––  
Max.  
230  
Units  
°C/W  
RθJA  
1
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback  
October 28, 2014  

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