Datasheet > IRLIZ24G_09

IRLIZ24G_09

更新时间： 2024-11-19 11:10:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	1701K
描述
Power MOSFET

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中文翻译

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数据手册

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IRLIZ24G_09 数据手册

IRLIZ24G, SiHLIZ24G

Vishay Siliconix

Power MOSFET

FEATURES

• Isolated Package

PRODUCT SUMMARY

V_DS(V)

• High Voltage Isolation = 2.5 kV_RMS(t = 60 s;

f = 60 Hz)

RoHS

R_DS(on)(Ω)

V_GS= 5.0 V

0.10

COMPLIANT

Q_g(Max.) (nC)

4.5

• Sink to Lead Creepage Distance = 4.8 mm

_gs(nC)

_gd(nC)

• Logic-Level Gate Drive

• R_DS(on)Specified at V_GS= 4 V and 5 V

• Fast Switching

Configuration

Single

• Ease of Paralleling

• Lead (Pb)-free

TO-220 FULLPAK

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional

insulating hardware in commercial-industrial applications.

The molding compound used provides a high isolation

capability and a low thermal resistance between the tab and

external heatsink. This isolation is equivalent to using a 100

micron mica barrier with standard TO-220 product. The

FULLPAK is mounted to a heatsink using a single clip or by

a single screw fixing.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220 FULLPAK

IRLIZ24GPbF

SiHLIZ24G-E3

Lead (Pb)-free

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

Continuous Drain Current

V_GSat 5.0 V

I_D

T_C=100°C

Pulsed Drain Current^a

I_DM

0.24

Linear Derating Factor

W/°C

Single Pulse Avalanche Energy^b

E_AS

P_D

100

Maximum Power Dissipation

_C= 25 °C

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

4.5

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 175

300^d

°C

for 10 s

6-32 or M3 screw

lbf · in

N · m

Mounting Torque

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, starting T_J= 25 °C, L = 595 µH, R_G= 25 Ω, I_AS= 14 A (see fig. 12c).

c. I_SD≤ 17 A, dI/dt ≤ 140 A/µs, V_DD≤ V_DS, T_J≤ 175 °C.

d. 1.6 mm from case.

Document Number: 91316

S09-0037-Rev. A, 19-Jan-09

www.vishay.com

12 3 4 5 6 7 8

中文翻译

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与IRLIZ24G_09相关器件

型号	品牌	获取价格	描述	数据表
IRLIZ24G-002PBF	VISHAY	获取价格	Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal
IRLIZ24G-003	VISHAY	获取价格	Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal
IRLIZ24G-003PBF	VISHAY	获取价格	Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal
IRLIZ24G-004	VISHAY	获取价格	Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal
IRLIZ24G-004PBF	VISHAY	获取价格	Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal
IRLIZ24G-005PBF	VISHAY	获取价格	Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal
IRLIZ24G-006	VISHAY	获取价格	Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal
IRLIZ24G-006PBF	VISHAY	获取价格	Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal
IRLIZ24G-009PBF	VISHAY	获取价格	Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal
IRLIZ24G-010	VISHAY	获取价格	Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal

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