Datasheet > IRL7472L1TRPbF

IRL7472L1TRPbF

更新时间： 2024-01-16 20:52:20

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	534K
描述
DirectFETÂ® N-Channel Power MOSFET

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数据手册

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IRL7472L1TRPbF 数据手册

StrongIRFET™

IRL7472L1TRPbF

DirectFET^®N-Channel Power MOSFET 

Application

Brushed Motor drive applications

 BLDC Motor drive applications

Battery powered circuits

 Half-bridge and full-bridge topologies

 Synchronous rectifier applications

 Resonant mode power supplies

 OR-ing and redundant power switches

 DC/DC and AC/DC converters

 DC/AC Inverters

V_DSS

40V

R_DS(on)typ.

0.34m

max

@ V_GS= 10V

0.45m

0.52m

0.70m

375A

R_DS(on)typ.

max

@ V_GS= 4.5V

I_{D (Package Limited)}

Benefits

Optimized for Logic Level Drive

Improved Gate, Avalanche and Dynamic dv/dt Ruggedness

Fully Characterized Capacitance and Avalanche SOA

Enhanced body diode dv/dt and di/dt Capability

Lead-Free, RoHS Compliant

DirectFET™ ISOMETRIC

Standard Pack

Base part number

Package Type

Orderable Part Number

IRL7472L1TRPbF

Form

Quantity

4000

IRL7472L1PbF

Direct FET Large Can (L8)

Tape and Reel

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

700

600

500

400

300

200

100

= 195A

Limited by package

= 125°C

= 25°C

10 12 14 16 18 20

100

125

150

175

, Case Temperature (°C)

Gate -to -Source Voltage (V)

GS,

Fig 2. Maximum Drain Current vs. Case Temperature

Fig 1. Typical On-Resistance vs. Gate Voltage

2016-8-9

12 3 4 5 6 7...12

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