品牌 | Logo | 应用领域 |
英飞凌 - INFINEON | / | |
页数 | 文件大小 | 规格书 |
9页 | 281K | |
描述 | ||
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRL6372PBF | INFINEON |
获取价格 |
Battery operated DC motor inverter MOSFET | |
IRL6372TRPBF | INFINEON |
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Battery operated DC motor inverter MOSFET | |
IRL640 | VISHAY |
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Power MOSFET | |
IRL640 | INFINEON |
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HEXFET Power MOSFET | |
IRL640 | SAMSUNG |
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Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Met | |
IRL640A | FAIRCHILD |
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Advanced Power MOSFET | |
IRL640A | ONSEMI |
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功率 MOSFET,N 沟道,逻辑电平,A-FET,200 V,18 A,180 mΩ,T | |
IRL640AJ69Z | FAIRCHILD |
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Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Met | |
IRL640APWD | ONSEMI |
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功率 MOSFET,N 沟道,逻辑电平,A-FET,200 V,18 A,180 mΩ,T | |
IRL640L | VISHAY |
获取价格 |
Power Field-Effect Transistor, 17A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Met |