Datasheet > IRL520NP

IRL520NP

更新时间： 2025-07-18 19:06:03

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IRL520NP 数据手册

IRL520NP

www.VBsemi.tw

N-Channel 100-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

TrenchFET^®Power MOSFET

V_(BR)DSS(V)

R_DS(on)(Ω)

I_D(A)

175 °C Junction Temperature

Low Thermal Resistance Package

100 % R_gTested

RoHS

0.092 at V_GS= 10 V

100

COMPLIANT

APPLICATIONS

Isolated DC/DC Converters

•

TO-220AB

G D

N-Channel MOSFET

Top View

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

100

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

T_C= 25 °C

Continuous Drain Current (T_J= 175 °C)

I_D

T_C= 125 °C

I_DM

I_AS

Pulsed Drain Current

Avalanche Current

Single Pulse Avalanche Energy^b

L = 0.1 mH

E_AS

200

T_C= 25 °C

T_A= 25 °C^d

105

3.75

Maximum Power Dissipation^b

P_D

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

PCB Mount (TO-263)^d

R_thJA

Junction-to-Ambient

°C/W

R_thJC

Junction-to-Case (Drain)

0.4

Notes:

a. Package limited.

b. Duty cycle ≤ 1 %.

c. See SOA curve for voltage derating.

d. When Mounted on 1" square PCB (FR-4 material).

E-mail：China@VBsemi TEL:86-755-83251052

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