Datasheet > IRL3705NSTRLPBF

IRL3705NSTRLPBF

更新时间： 2024-11-27 21:10:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	196K
描述
Power Field-Effect Transistor, 89A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

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IRL3705NSTRLPBF 数据手册

PD - 91502C

IRL3705NS/L

HEXFET^®Power MOSFET

l Logic-Level Gate Drive

l Advanced Process Technology

l Surface Mount (IRL3705NS)

l Low-profilethrough-hole(IRL3705NL)

l 175°C Operating Temperature

l Fast Switching

V_DSS= 55V

R_DS(on)= 0.01Ω

l Fully Avalanche Rated

Description

I_D= 89A

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedizeddevicedesignthatHEXFETPowerMOSFETs

arewellknownfor,providesthedesignerwithanextremely

efficient and reliable device for use in a wide variety of

applications.

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D²Pak is suitable for high current applications because of

its low internal connection resistance and can dissipate

up to 2.0W in a typical surface mount application.

Thethrough-holeversion(IRL3705NL)isavailableforlow-

profileapplications.

T O -262

Pak

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10Vꢀ

Pulsed Drain Current ꢀ

310

3.8

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

170

1.1

Linear Derating Factor

W/°C

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 16

340

Single Pulse Avalanche Energyꢀ

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ꢀ

Operating Junction and

1.7

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

0.90

Units

R_θJC

R_θJA

°C/W

Junction-to-Ambient ( PCB Mounted,steady-state)**

5/12/98

12 3 4 5 6 7...11

中文翻译

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IRL3705NSTRLPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRL3705NSTRL	INFINEON	类似代替	Logic-Level Gate Drive
IRL3705NSPBF	INFINEON	类似代替	HEXFET Power MOSFET
IRL3705NS	INFINEON	类似代替	HEXFET Power MOSFET

与IRL3705NSTRLPBF相关器件

型号	品牌	获取价格	描述	数据表
IRL3705NSTRR	INFINEON	获取价格	Power Field-Effect Transistor, 89A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Met
IRL3705NSTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 89A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Met
IRL3705S	INFINEON	获取价格	Power Field-Effect Transistor, 80A I(D), 50V, 0.012ohm, 1-Element, N-Channel, Silicon, Met
IRL3705STRL	INFINEON	获取价格	Power Field-Effect Transistor, 80A I(D), 50V, 0.012ohm, 1-Element, N-Channel, Silicon, Met
IRL3705STRR	INFINEON	获取价格	Power Field-Effect Transistor, 80A I(D), 50V, 0.012ohm, 1-Element, N-Channel, Silicon, Met
IRL3705Z	INFINEON	获取价格	AUTOMOTIVE MOSFET
IRL3705ZL	INFINEON	获取价格	AUTOMOTIVE MOSFET
IRL3705ZLPBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRL3705ZPBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRL3705ZS	INFINEON	获取价格	AUTOMOTIVE MOSFET

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