Datasheet > 触发装置 > 可控硅整流器> IRKT72/10AS90

IRKT72/10AS90

更新时间： 2024-10-27 03:07:23

品牌	Logo	应用领域
英飞凌 - INFINEON		栅极触发装置可控硅整流器二极管局域网
页数	文件大小	规格书
10页	234K
描述
ADD-A-pak GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRKT72/10AS90 数据手册

Bulletin I27132 rev. H 10/02

IRK.71, .91 SERIES

THYRISTOR/ DIODE and

THYRISTOR/ THYRISTOR

ADD-A-pak^TMGEN V Power Modules

Features

Benefits

High Voltage

Up to 1600V

Industrial Standard Package

Thick Al metal die and double stick bonding

Thick copper baseplate

Full compatible TO-240AA

75 A

95 A

High Surge capability

Easy Mounting on heatsink

UL E78996 approved

Al₂0₃DBC insulator

Heatsink grounded

3500V_RMSisolating voltage

Mechanical Description

The Generation V of Add-A-pak module combine the

excellent thermal performance obtained by the usage

of Direct Bonded Copper substrate with superior

mechanical ruggedness, thanks to the insertion of a

solidCopperbaseplateatthebottomsideofthedevice.

The Cu baseplate allow an easier mounting on the

majority of heatsink with increased tolerance of surface

roughness and improve thermal spread.

Theelectricalterminalsaresecuredagainstaxialpull-out:

they are fixed to the module housing via a click-stop

feature already tested and proved as reliable on other IR

modules.

Electrical Description

These modules are intended for general purpose high

voltageapplicationssuchashighvoltageregulatedpower

supplies, lighting circuits, temperature and motor speed

control circuits, UPS and battery charger.

The Generation V of AAP module is manufactured

without hard mold, eliminating in this way any possible

direct stress on the leads.

Major Ratings and Characteristics

Parameters IRK.71

IRK.91

Units

I_T(AV)or I_F(AV)

@85°C

I_O(RMS)(*)

165

210

I_TSM@50Hz

I_FSM@60Hz

1665

1740

1785

1870

I t @50Hz

13.86

15.91

KA s

@60Hz

12.56

138.6

14.52

159.1

KA s

I √t

KA √s

V_RRMrange

T_STG

400to1600

- 40 to 125

- 40 to125

^oC

T_J

(*) As AC switch.

www.irf.com

12 3 4 5 6 7...10

中文翻译

下载PDF

与IRKT72/10AS90相关器件

型号	品牌	获取价格	描述	数据表
IRKT72/10P	INFINEON	获取价格	Silicon Controlled Rectifier, 75000mA I(T), 1000V V(RRM),
IRKT72/10PBF	VISHAY	获取价格	Silicon Controlled Rectifier, 165A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 2 Element, TO-240A
IRKT72/10S90	INFINEON	获取价格	Silicon Controlled Rectifier, 165A I(T)RMS, 70000mA I(T), 1000V V(DRM), 1000V V(RRM), 2 El
IRKT72/10S90P	INFINEON	获取价格	Silicon Controlled Rectifier, 75000mA I(T), 1000V V(RRM),
IRKT72/10S90PBF	VISHAY	获取价格	Silicon Controlled Rectifier, 165A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 2 Element, TO-240A
IRKT72/12	INFINEON	获取价格	Silicon Controlled Rectifier, 165A I(T)RMS, 70000mA I(T), 1200V V(DRM), 1200V V(RRM), 2 El
IRKT72/12A	INFINEON	获取价格	ADD-A-pak GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
IRKT72/12A	VISHAY	获取价格	Silicon Controlled Rectifier, 75000mA I(T), 1200V V(DRM), 1200V V(RRM), 2 Element, TO-240A
IRKT72/12AS90	INFINEON	获取价格	ADD-A-pak GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
IRKT72/12AS90	VISHAY	获取价格	Silicon Controlled Rectifier, 75000mA I(T), 1200V V(DRM), 1200V V(RRM), 2 Element, TO-240A

与IRKT72/10AS90相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

10
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

10
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

37
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

45

产品中心

服务支持

精选活动

关于我们

帮助中心

IRKT72/10AS90

IRKT72/10AS90 数据手册

与IRKT72/10AS90相关器件

与IRKT72/10AS90相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRKT72/10AS90

IRKT72/10AS90 数据手册

与IRKT72/10AS90相关器件

与IRKT72/10AS90相关文章

您还可以找

您在本页遇到什么问题？