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IRKT71-08AS90 PDF预览

IRKT71-08AS90

更新时间: 2024-11-17 22:32:07
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管
页数 文件大小 规格书
10页 306K
描述
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

IRKT71-08AS90 数据手册

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Bulletin I27132 rev. I 09/04  
IRK.71, .91 SERIES  
ADD-A-pakTM GEN V Power Modules  
THYRISTOR/ DIODE and  
THYRISTOR/ THYRISTOR  
Features  
Benefits  
High Voltage  
Up to 1600V  
Industrial Standard Package  
Thick Al metal die and double stick bonding  
Thick copper baseplate  
Full compatible TO-240AA  
High Surge capability  
Easy Mounting on heatsink  
Al203 DBC insulator  
Heatsink grounded  
75 A  
95 A  
UL E78996 approved  
3500VRMS isolating voltage  
Mechanical Description  
Theelectricalterminalsaresecuredagainstaxialpull-out:  
they are fixed to the module housing via a click-stop  
feature already tested and proved as reliable on other IR  
modules.  
The Generation V of Add-A-pak module combine the  
excellent thermal performance obtained by the usage  
of Direct Bonded Copper substrate with superior  
mechanical ruggedness, thanks to the insertion of a  
solidCopperbaseplateatthebottomsideofthedevice.  
The Cu baseplate allow an easier mounting on the  
majority of heatsink with increased tolerance of surface  
roughness and improve thermal spread.  
Electrical Description  
These modules are intended for general purpose high  
voltageapplicationssuchashighvoltageregulatedpower  
supplies, lighting circuits, temperature and motor speed  
control circuits, UPS and battery charger.  
The Generation V of AAP module is manufactured  
without hard mold, eliminating in this way any possible  
direct stress on the leads.  
Major Ratings and Characteristics  
Parameters IRK.71  
IRK.91  
Units  
IT(AV)or IF(AV)  
75  
95  
A
A
@85°C  
IO(RMS) (*)  
165  
210  
ITSM @50Hz  
IFSM @60Hz  
1665  
1740  
1785  
1870  
A
A
2
2
I t @50Hz  
13.86  
15.91  
KA s  
2
@60Hz  
12.56  
138.6  
14.52  
159.1  
KA s  
2
2
I t  
KA s  
VRRM range  
TSTG  
400to1600  
V
- 40 to 125  
-40to125  
oC  
oC  
TJ  
(*) As AC switch.  
1
www.irf.com  

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