Datasheet > IRKN92/10PBF

IRKN92/10PBF

更新时间： 2024-11-27 04:22:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
11页	311K
描述
Silicon Controlled Rectifier, 210A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-240AA, LEAD FREE, ADD-A-PAK-5

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRKN92/10PBF 数据手册

Bulletin I27211 03/06

IRK.71, .91..PbF SERIES

ADD-A-pak^TMGEN V Power Modules

THYRISTOR/ DIODE and

THYRISTOR/ THYRISTOR

Features

Benefits

High Voltage

Up to 1600V

IndustrialStandardPackage

Thickcopperbaseplate

UL E78996 approved

3500V_RMSisolatingvoltage

TOTALLYLEAD-FREE

Full compatible TO-240AA

High Surge capability

Easy Mounting on heatsink

Al₂0₃DBC insulator

Heatsink grounded

75 A

95 A

Mechanical Description

Theelectricalterminalsaresecuredagainstaxialpull-out:

they are fixed to the module housing via a click-stop

feature already tested and proved as reliable on other IR

modules.

The Generation V of Add-A-pak module combine the

excellent thermal performance obtained by the usage

of Direct Bonded Copper substrate with superior

mechanical ruggedness, thanks to the insertion of a

solidCopperbaseplateatthebottomsideofthedevice.

The Cu baseplate allow an easier mounting on the

majority of heatsink with increased tolerance of surface

roughness and improve thermal spread.

Electrical Description

These modules are intended for general purpose high

voltageapplicationssuchashighvoltageregulatedpower

supplies, lighting circuits, temperature and motor speed

control circuits, UPS and battery charger.

The Generation V of AAP module is manufactured

without hard mold, eliminating in this way any possible

direct stress on the leads.

Major Ratings and Characteristics

Parameters IRK.71

IRK.91

Units

I_T(AV)or I_F(AV)

@85°C

I_O(RMS)(*)

165

210

I_TSM@50Hz

I_FSM@60Hz

1665

1740

1785

1870

I t @50Hz

13.86

15.91

KA s

@60Hz

12.56

138.6

14.52

159.1

KA s

I √t

KA √s

V_RRMrange

T_STG

400to1600

- 40 to 125

-40to125

^oC

T_J

(*) As AC switch.

Document Number: 94421

www.vishay.com

12 3 4 5 6 7...11

中文翻译

下载PDF

与IRKN92/10PBF相关器件

型号	品牌	获取价格	描述	数据表
IRKN92/10S90P	INFINEON	获取价格	Silicon Controlled Rectifier, 95000mA I(T), 1000V V(RRM),
IRKN92/10S90PBF	VISHAY	获取价格	Silicon Controlled Rectifier, 210A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-240A
IRKN92/12A	VISHAY	获取价格	Silicon Controlled Rectifier, 95000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-240A
IRKN92/12AS90	INFINEON	获取价格	Silicon Controlled Rectifier, 149.15A I(T)RMS, 95000mA I(T), 1200V V(DRM), 1200V V(RRM), 1
IRKN92/12AS90	VISHAY	获取价格	Silicon Controlled Rectifier, 95000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-240A
IRKN92/12AS90PBF	INFINEON	获取价格	Silicon Controlled Rectifier, 149.15A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-2
IRKN92/12PBF	VISHAY	获取价格	暂无描述
IRKN92/12S90P	INFINEON	获取价格	Silicon Controlled Rectifier, 95000mA I(T), 1200V V(RRM),
IRKN92/12S90PBF	VISHAY	获取价格	Silicon Controlled Rectifier, 210A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-240A
IRKN92/14A	VISHAY	获取价格	Silicon Controlled Rectifier, 95000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, TO-240A

与IRKN92/10PBF相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

45
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

34
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

62
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

59

产品中心

服务支持

精选活动

关于我们

帮助中心

IRKN92/10PBF

IRKN92/10PBF 数据手册

与IRKN92/10PBF相关器件

与IRKN92/10PBF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRKN92/10PBF

IRKN92/10PBF 数据手册

与IRKN92/10PBF相关器件

与IRKN92/10PBF相关文章

您还可以找

您在本页遇到什么问题？