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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| IRKHF152-08DM | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 235.5A I(T)RMS, 150000mA I(T), 800V V(DRM), 800V V(RRM), 1 E |
|
| IRKHF152-08DMN | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 235.5A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element |
|
| IRKHF152-08DP | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 235.5A I(T)RMS, 150000mA I(T), 800V V(DRM), 800V V(RRM), 1 E |
|
| IRKHF152-08DPN | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 235.5A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element |
|
| IRKHF152-08EJ | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 235.5A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element |
|
| IRKHF152-08EL | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 235.5A I(T)RMS, 150000mA I(T), 800V V(DRM), 800V V(RRM), 1 E |
|
| IRKHF152-08ELN | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 235.5A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element |
|
| IRKHF152-08EM | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 235.5A I(T)RMS, 150000mA I(T), 800V V(DRM), 800V V(RRM), 1 E |
|
| IRKHF152-08EMN | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 235.5A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element |
|
| IRKHF152-08EP | ETC |
获取价格 |
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|800V V(RRM)|150A I(T) |
|
解析光耦仿真器：升级光耦合器技术的必要性
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国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
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