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IRKH42/10AS90

更新时间： 2024-11-13 04:23:11

品牌	Logo	应用领域
英飞凌 - INFINEON		栅极二极管局域网
页数	文件大小	规格书
10页	234K
描述
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

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中文翻译

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数据手册

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IRKH42/10AS90 数据手册

Bulletin I27131 rev. G 10/02

IRK.41, .56 SERIES

THYRISTOR/ DIODE and

THYRISTOR/ THYRISTOR

ADD-A-pak^TMGEN V Power Modules

Features

Benefits

High Voltage

Up to 1600V

45 A

60 A

Industrial Standard Package

Thick Al metal die and double stick bonding

Thick copper baseplate

Full compatible TO-240AA

High Surge capability

Easy Mounting on heatsink

UL E78996 approved

Al₂0₃DBC insulator

Heatsink grounded

3500V_RMSisolating voltage

Mechanical Description

The Generation V of Add-A-pak module combine the

excellentthermalperformanceobtainedbytheusageof

Direct Bonded Copper substrate with superior

mechanical ruggedness, thanks to the insertion of a

solidCopperbaseplateatthebottomsideofthedevice.

The Cu baseplate allow an easier mounting on the

majority of heatsink with increased tolerance of surface

roughness and improve thermal spread.

The electrical terminals are secured against axial pull-out:

they are fixed to the module housing via a click-stop

feature already tested and proved as reliable on other IR

modules.

Electrical Description

These modules are intended for general purpose high

voltageapplicationssuchashighvoltageregulatedpower

supplies, lighting circuits, temperature and motor speed

control circuits, UPS and battery charger.

The Generation V of AAP module is manufactured

without hard mold, eliminating in this way any possible

direct stress on the leads.

Major Ratings and Characteristics

Parameters IRK.41

IRK.56

Units

I_T(AV)or I_F(AV)

@ 85°C

I_O(RMS)(*)

100

135

I_TSM@50Hz

I_FSM@60Hz

850

890

1310

1370

I t @50Hz

3.61

8.50

KA s

@60Hz

3.30

36.1

7.82

85.0

KA s

I √t

KA √s

_RRMrange

400 to 1600

T_STG

- 40 to 125

- 40 to125

^oC

T_J

(*) As AC switch.

www.irf.com

12 3 4 5 6 7...10

中文翻译

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与IRKH42/10AS90相关器件

型号	品牌	获取价格	描述	数据表
IRKH42/10AS90PBF	INFINEON	获取价格	Silicon Controlled Rectifier, 70.65A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-24
IRKH42/10P	VISHAY	获取价格	Silicon Controlled Rectifier, 100A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-240A
IRKH42/10S90	INFINEON	获取价格	Silicon Controlled Rectifier, 100A I(T)RMS, 40000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 El
IRKH42/10S90P	VISHAY	获取价格	Silicon Controlled Rectifier, 100A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-240A
IRKH42/12	INFINEON	获取价格	暂无描述
IRKH42/12A	INFINEON	获取价格	THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
IRKH42/12APBF	INFINEON	获取价格	Silicon Controlled Rectifier, 70.65A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-24
IRKH42/12AS90	INFINEON	获取价格	THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
IRKH42/12AS90PBF	INFINEON	获取价格	Silicon Controlled Rectifier, 70.65A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-24
IRKH42/12P	VISHAY	获取价格	Silicon Controlled Rectifier, 100A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-240A