Datasheet > IRKD166-20-NPBF

IRKD166-20-NPBF

更新时间： 2024-11-20 10:24:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	187K
描述
165A, 2000V, SILICON, RECTIFIER DIODE, POWER, INT-A-PAK-3

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IRKD166-20-NPBF 数据手册

I27096 rev. B 10/99

IRK. SERIES

INT-A-pakä Power Modules

STANDARD RECOVERY DIODES

Features

High voltage

Electrically isolated base plate

165 A

195 A

230 A

3000 V

isolating voltage

RMS

Industrial standard package

Simplified mechanical designs, rapid assembly

High surge capability

Large creepage distances

UL E78996 approved

Description

These series of INT-A-paks uses high voltage power

diodes in two basic configurations. The semiconductors

are electrically isolated from the metal base, allowing

common heatsinks and compact assemblies to be built.

They can be interconnected to form single phase or three

phase bridges and the single diode module can be used

in conjunction with the thyristor modules as a freewheel

diode. These modules are intended for general purpose

applications such as battery chargers, welders and plat-

ing equipment and where high voltage and high current

are required (motor drives, etc.).

Major Ratings and Characteristics

IRK.165.. IRK.195.. IRK.235..

IRK.166.. IRK.196.. IRK.236..

Parameters

Units

I_F(AV)

165

100

260

4000

4200

195

100

230

100

°C

@ T_C

I_F(RMS)

305

360

I_FSM@50Hz

4750

4980

113

6540

6850

214

@60Hz

I t

@50Hz

@60Hz

KA s

103

195

KA s

I √t

1130

2140

KA √s

V_RRM

T_J

upto2000 upto2000 upto2400

-40 to 150

range

°C

www.irf.com

12 3 4 5 6 7...11

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