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IRHYS9A97034CM PDF预览

IRHYS9A97034CM

更新时间: 2024-11-22 14:56:35
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
15页 1100K
描述
Rad hard, -60V, -30A, single, P-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic, 100 krad(Si) TID, COTS

IRHYS9A97034CM 数据手册

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IRHYS9A97034CM (JANSR2N7659T3)  
Radiation Hardened Power MOSFET  
PD-97958D  
Thru-Hole (Low-Ohmic TO-257AA)  
-60V, -30A, P-channel, R9 Superjunction Technology  
Features  
Product Summary  
Single event effect (SEE) hardened  
BVDSS: -60V  
ID : -30A*  
RDS(on),max : 46m  
QGmax : 48nC  
(up to LET of 91.3 MeV·cm2/mg)  
Low RDS(on)  
Improved SOA for linear mode operation  
Improved avalanche energy  
Simple drive requirements  
Hermetically sealed  
Electrically isolated  
Ceramic eyelets  
REF: MIL-PRF-19500/780  
ESD rating: Class 2 per MIL-STD-750, Method 1020  
Potential Applications  
Power distribution  
Linear regulator  
Latching current limiter  
Load and protection switch  
Low-Ohmic  
TO-257AA  
Tabless  
TO-257AA  
Product Validation  
Qualified according to MIL-PRF-19500 for space applications  
Description  
IR HiRel R9 technology provides superior power MOSFETs for space applications. This family of p-channel  
MOSFETs are the first radiation hardened devices that are based on a superjunction technology. These devices  
have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with  
Linear Energy Transfer (LET) up to 91.3 MeV·cm2/mg. Their combination of low RDS(on) and improved SOA allows  
for better performance in applications such as Latching Current Limiters (LCL) or Solid-State Power Controllers  
(SSPC). These devices retain all of the well-established advantages of MOSFETs such as voltage control, fast  
switching and temperature stability of electrical parameters.  
Ordering Information  
Table 1  
Ordering options  
Part number  
Package  
Screening Level  
COTS  
TID Level  
IRHYS9A97034CM  
JANSR2N7659T3  
IRHYS9A93034CM  
JANSF2N7659T3  
IRHYB9A97034CM  
JANSR2N7659D5  
IRHYB9A93034CM  
JANSF2N7659D5  
Low-Ohmic TO-257AA  
Low-Ohmic TO-257AA  
Low-Ohmic TO-257AA  
Low-Ohmic TO-257AA  
Tabless TO-257AA  
100 krad(Si)  
100 krad(Si)  
300 krad(Si)  
300 krad(Si)  
100 krad(Si)  
100 krad(Si)  
300 krad(Si)  
300 krad(Si)  
JANS  
COTS  
JANS  
COTS  
Tabless TO-257AA  
JANS  
Tabless TO-257AA  
COTS  
Tabless TO-257AA  
COTS  
Please read the Important Notice and Warnings at the end of this document  
page 1 of 15  
www.infineon.com/irhirel  
2022-09-09  
 
 
 
 
 

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