IRHY54230CMPBF

更新时间： 2024-01-03 14:14:20

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IRHY54230CMPBF 数据手册

PD - 93827A

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-257AA)

IRHY57230CM

200V,N-CHANNEL

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHY57230CM 100K Rads (Si)

IRHY53230CM 300K Rads (Si)

IRHY54230CM 600K Rads (Si)

0.21Ω 12.5A

IRHY58230CM 1000K Rads (Si) 0.26Ω 12.5A

TO-257AA

Features:

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space appli-

cations. These devices have been characterized for

Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

of low RDS(on) and low gate charge reduces the power

losses in switching applications such as DC to DC

converters and motor control. These devices retain

all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of paral-

leling and temperature stability of electrical param-

eters.

Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

12.5

= 12V, T = 100°C Continuous Drain Current

8.0

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

W/°C

Linear Derating Factor

0.6

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

12.5

7.5

dv/dt

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

4.4

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300 (0.063in./1.6mm from case for 10sec)

4.3 ( Typical )

For footnotes refer to the last page

www.irf.com

1/30/2001

12 3 4 5 6 7 8

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