IRHY54230CM

更新时间： 2024-11-18 03:36:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	119K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRHY54230CM 数据手册

PD - 93827A

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-257AA)

IRHY57230CM

200V,N-CHANNEL

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHY57230CM 100K Rads (Si)

IRHY53230CM 300K Rads (Si)

IRHY54230CM 600K Rads (Si)

0.21Ω 12.5A

IRHY58230CM 1000K Rads (Si) 0.26Ω 12.5A

TO-257AA

Features:

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space appli-

cations. These devices have been characterized for

Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

of low RDS(on) and low gate charge reduces the power

losses in switching applications such as DC to DC

converters and motor control. These devices retain

all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of paral-

leling and temperature stability of electrical param-

eters.

Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

12.5

= 12V, T = 100°C Continuous Drain Current

8.0

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

W/°C

Linear Derating Factor

0.6

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

12.5

7.5

dv/dt

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

4.4

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300 (0.063in./1.6mm from case for 10sec)

4.3 ( Typical )

For footnotes refer to the last page

www.irf.com

1/30/2001

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRHY54230CM相关器件

型号	品牌	获取价格	描述	数据表
IRHY54230CMPBF	INFINEON	获取价格	暂无描述
IRHY54Z30CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
IRHY54Z30CMPBF	INFINEON	获取价格	暂无描述
IRHY55130CM	INFINEON	获取价格	Rad hard, 100V, 18A, single, N-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 500 kr
IRHY57034CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
IRHY57034CMPBF	INFINEON	获取价格	Power Field-Effect Transistor, 18A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Meta
IRHY57034CMSCS	INFINEON	获取价格	Power Field-Effect Transistor, 16A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta
IRHY57034CMSCSPBF	INFINEON	获取价格	Power Field-Effect Transistor, 16A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta
IRHY57130CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET
IRHY57133CMSE	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)