5秒后页面跳转
IRHY54130CM PDF预览

IRHY54130CM

更新时间: 2024-11-20 03:36:55
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 130K
描述
RADIATION HARDENED POWER MOSFET

IRHY54130CM 数据手册

 浏览型号IRHY54130CM的Datasheet PDF文件第2页浏览型号IRHY54130CM的Datasheet PDF文件第3页浏览型号IRHY54130CM的Datasheet PDF文件第4页浏览型号IRHY54130CM的Datasheet PDF文件第5页浏览型号IRHY54130CM的Datasheet PDF文件第6页浏览型号IRHY54130CM的Datasheet PDF文件第7页 
                                                                         
PD - 93826D  
IRHY57130CM  
JANSR2N7484T3  
100V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (TO-257AA)  
REF: MIL-PRF-19500/702  
TECHNOLOGY  
5
™
Product Summary  
Part Number Radiation Level RDS(on)  
IRHY57130CM 100K Rads (Si) 0.07Ω  
IRHY53130CM 300K Rads (Si) 0.07Ω  
IRHY54130CM 500K Rads (Si) 0.07Ω  
IRHY58130CM1000K Rads (Si) 0.085Ω  
ID  
QPL Part Number  
18A* JANSR2N7484T3  
18A* JANSF2N7484T3  
18A* JANSG2N7484T3  
18A* JANSH2N7484T3  
TO-257AA  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space  
applications.These devices have been characterized  
for Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
of low RDS(on) and low gate charge reduces the  
power losses in switching applications such as DC  
to DC converters and motor control. These devices  
retain all of the well established advantages of  
MOSFETs such as voltage control, fast switching,  
ease of paralleling and temperature stability of  
electrical parameters.  
Features:  
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Ultra Low RDS(on)  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Eyelets  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
18*  
D
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
14  
72  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
75  
W
W/°C  
V
D
C
Linear Derating Factor  
0.6  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
87  
GS  
E
mJ  
A
AS  
I
18  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
7.5  
mJ  
V/ns  
AR  
dv/dt  
1.4  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Lead Temperature  
Weight  
300 (0.063in./1.6mm from case for 10sec)  
4.3 (Typical)  
* Current is limited by package  
For footnotes refer to the last page  
www.irf.com  
1
4/26/06  

与IRHY54130CM相关器件

型号 品牌 获取价格 描述 数据表
IRHY54230CM INFINEON

获取价格

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
IRHY54230CMPBF INFINEON

获取价格

暂无描述
IRHY54Z30CM INFINEON

获取价格

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
IRHY54Z30CMPBF INFINEON

获取价格

暂无描述
IRHY55130CM INFINEON

获取价格

Rad hard, 100V, 18A, single, N-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 500 kr
IRHY57034CM INFINEON

获取价格

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
IRHY57034CMPBF INFINEON

获取价格

Power Field-Effect Transistor, 18A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Meta
IRHY57034CMSCS INFINEON

获取价格

Power Field-Effect Transistor, 16A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta
IRHY57034CMSCSPBF INFINEON

获取价格

Power Field-Effect Transistor, 16A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta
IRHY57130CM INFINEON

获取价格

RADIATION HARDENED POWER MOSFET