Datasheet > IRHNS9A93160

IRHNS9A93160

更新时间： 2024-11-25 15:18:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	503K
描述
Rad hard, -100V, -91A, P-channel MOSFET, R9 in SupIR-SMD package - SupIR-SMD, 300 krad(Si) TID, COTS

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRHNS9A93160 数据手册

IRHNS9A97160 (JANSR2N7665U2A)

Radiation Hardened Power MOSFET

PD-97984A

Surface-Mount (SupIR-SMD™)

-100V, -91A, P-channel, R9 Superjunction Technology

Features

Product Summary

•

Single event effect (SEE) hardened

(up to LET of 91 MeV·cm²/mg)

Low R_{DS (on)}

•

B_VDSS:-100V

I_D:-91A

R_{DS (on) max:}17m

Q_{G max:}230Nc

•

Improved SOA for linear mode operation

Fast switching

REF: MIL-PRF-19500/791

Low total gate charge

Simple drive requirements

Hermetically sealed

Electrically isolated

Ceramic eyelets

Light weight

ESD rating: Class 3B per MIL-STD-750, Method 1020

Potential Applications

SupIR-

SMD™

•

DC-DC converter

Motor drives

Inrush current protection

Power distribution

Product Validation

Qualified according to MIL-PRF-19500 for space applications

Description

IR HiRel R9 technology provides superior power MOSFETs for space applications. This family of p-channel

MOSFETs are the first radiation hardened devices that are based on a superjunction technology. These devices

have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with

Linear Energy Transfer (LET) up to 91 MeV·cm²/mg. Their combination of low R_{DS (on)}and improved SOA allows for

better performance in applications such as Solid-State Power Controllers (SSPC), DC-DC converters and motor

drives. These devices retain all of the well-established advantages of MOSFETs such as voltage control, fast

switching and temperature stability of electrical parameters.

Ordering Information

Table 1

Part number

IRHNS9A97160

Ordering options

Package

Screening Level

COTS

TID Level

SupIR-SMD™

100 krad (Si)

300 krad (Si)

JANSR2N7665U2A

IRHNS9A93160

JANS

COTS

JANSF2N7665U2A

JANS

Please read the Important Notice and Warnings at the end of this document

page 1 of 14

www.infineon.com/irhirel

2023-06-13

12 3 4 5 6 7...14

中文翻译

下载PDF

与IRHNS9A93160相关器件

型号	品牌	获取价格	描述	数据表
IRHNS9A93260	INFINEON	获取价格	Rad hard, -200V, -62A, single, P-channel MOSFET, R9 in a SupIR-SMD package - 300 krad(Si)
IRHNS9A97160	INFINEON	获取价格	Rad hard, -100V, -91A, P-channel MOSFET, R9 in SupIR-SMD package - SupIR-SMD, 100 krad(Si)
IRHNS9A97260	INFINEON	获取价格	Rad hard, -200V, -62A, single, P-channel MOSFET, R9 in a SupIR-SMD package - 100 krad(Si)
IRHO	EVERLIGHT	获取价格	5mm Infrared LED , T-1 3/4
IRHQ3110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)
IRHQ3110PBF	INFINEON	获取价格	Power Field-Effect Transistor, 3A I(D), 100V, 0.6ohm, 4-Element, N-Channel, Silicon, Metal
IRHQ3214	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)
IRHQ3214PBF	INFINEON	获取价格	Power Field-Effect Transistor, 1.6A I(D), 250V, 2.25ohm, 4-Element, N-Channel, Silicon, Me
IRHQ4110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)
IRHQ4110PBF	INFINEON	获取价格	Power Field-Effect Transistor, 3A I(D), 100V, 0.6ohm, 4-Element, N-Channel, Silicon, Metal

与IRHNS9A93160相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

38
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

30
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

58
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

54

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHNS9A93160

IRHNS9A93160 数据手册

与IRHNS9A93160相关器件

与IRHNS9A93160相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHNS9A93160

IRHNS9A93160 数据手册

与IRHNS9A93160相关器件

与IRHNS9A93160相关文章

您还可以找

您在本页遇到什么问题？