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IRHNS9A3264 PDF预览

IRHNS9A3264

更新时间: 2024-11-06 14:56:15
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
14页 603K
描述
Rad hard, 250V, 82A, single, N-channel MOSFET, R9 in SupIR-SMD package - SupIR-SMD package, 300 krad(Si) TID, COTS

IRHNS9A3264 数据手册

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IRHNS9A7264 (JANSR2N7658U2A)  
PD-97965C  
Radiation Hardened Power MOSFET  
Surface Mount (SupIR-SMD)  
250V, 82A, N-channel, R9 Superjunction Technology  
Product Summary  
Features  
BVDSS: 250V  
ID: 82A  
RDS (on), max: 17m  
QGmax: 165nC  
DLA Ref: MIL-PRF-19500/777  
Single event effect (SEE) hardened  
(up to LET of 88.2 MeV·cm2/mg)  
Low RDS(on)  
Fast switching  
Low total gate charge  
Simple drive requirements  
Hermetically sealed  
Ceramic package  
Light weight  
Surface mount  
ESD rating: Class 3B per MIL-STD-750, Method 1020  
SupIR-SMD™  
Potential Applications  
DC-DC converter  
Motor drives  
Product Validation  
Qualified according to MIL-PRF-19500 for space applications  
Description  
IR HiRel R9 technology provides superior power MOSFETs for space applications. These devices have improved  
immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy  
Transfer (LET) up to 88.2 MeV·cm2/mg. Their combination of low RDS(on) and fast switching times will allow for  
better performance in applications such as DC-DC converters or motor drives. These devices retain all of the well-  
established advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical  
parameters.  
Ordering Information  
Table 1  
Part number  
IRHNS9A7264  
Ordering options  
Package  
Screening Level  
COTS  
TID Level  
SupIR-SMD™  
SupIR-SMD™  
SupIR-SMD™  
SupIR-SMD™  
100 krad(Si)  
100 krad(Si)  
300 krad(Si)  
300 krad(Si)  
JANSR2N7658U2A  
IRHNS9A3264  
JANS  
COTS  
JANSF2N7658U2A  
JANS  
Please read the Important Notice and Warnings at the end of this document  
page 1 of 14  
www.infineon.com/irhirel  
2023-07-17  
 
 
 
 
 

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