PD-97894B
IRHNS9A7064
JANSR2N7652U2A
60V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SupIR-SMD)
REF: MIL-PRF-19500/777
TECHNOLOGY
R
9
Product Summary
Part Number Radiation Level RDS(on)
ID
QPL Part Number
JANSR2N7652U2A
JANSF2N7652U2A
IRHNS9A7064
IRHNS9A3064
100 kRads (Si)
300 kRads (Si)
100A*
100A*
4.0m
4.0m
SupIR-SMD
Description
Features
Low RDS(on)
IR HiRel R9 technology provides superior power MOSFETs
for space applications. These devices have improved
immunity to Single Event Effect (SEE) and have been
characterized for useful performance with Linear Energy
Transfer (LET) up to 90MeV/(mg/cm2). Their combination of
low RDS(on) and faster switching times reduces the power
losses and increases power density in today’s high speed
switching applications such as DC-DC converters and motor
controllers. These devices retain all of the well established
advantages of MOSFETs such as voltage control, fast
switching temperature stability of electrical parameters.
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Hermetically Sealed
Ceramic Package
Light Weight
Surface Mount
ESD Rating: Class 3B per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Pre-Irradiation
Symbol
Parameter
Value
Units
ID1 @ VGS = 12V, TC = 25°C Continuous Drain Current
ID2 @ VGS = 12V, TC = 100°C Continuous Drain Current
100*
A
100*
400
IDM @ TC = 25°C
PD @ TC = 25°C
Pulsed Drain Current
Maximum Power Dissipation
250
W
W/°C
V
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
2.0
VGS
EAS
IAR
± 20
4000
100
mJ
A
EAR
dv/dt
TJ
25
mJ
V/ns
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
4.8
-55 to + 150
TSTG
°C
g
300 (for 5s)
3.3 (Typical)
Weight
* Current is limited by package
For Footnotes, refer to the page 2.
1
2021-03-08
International Rectifier HiRel Products, Inc.