Datasheet > IRHNS9A3064SCS

IRHNS9A3064SCS

更新时间： 2024-11-21 14:56:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	1280K
描述
Rad hard, 60V, 100A, single, N-Channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 300 krad(Si) TID, QIRL

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IRHNS9A3064SCS 数据手册

PD-97894B

IRHNS9A7064

JANSR2N7652U2A

60V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SupIR-SMD)

REF: MIL-PRF-19500/777

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

I_D

QPL Part Number

JANSR2N7652U2A

JANSF2N7652U2A

IRHNS9A7064

IRHNS9A3064

100 kRads (Si)

300 kRads (Si)

100A*

4.0m

SupIR-SMD

Description

Features

 Low RDS(on)

IR HiRel R9 technology provides superior power MOSFETs

for space applications. These devices have improved

immunity to Single Event Effect (SEE) and have been

characterized for useful performance with Linear Energy

Transfer (LET) up to 90MeV/(mg/cm²). Their combination of

low RDS(on) and faster switching times reduces the power

losses and increases power density in today’s high speed

switching applications such as DC-DC converters and motor

controllers. These devices retain all of the well established

advantages of MOSFETs such as voltage control, fast

switching temperature stability of electrical parameters.

 Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Ceramic Package

 Light Weight

 Surface Mount

 ESD Rating: Class 3B per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Parameter

Value

Units

I_D1@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 12V, T_C= 100°C Continuous Drain Current

100*

400

I_DM@ T_C= 25°C

P_D@ T_C= 25°C

Pulsed Drain Current 

Maximum Power Dissipation

250

W/°C

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

2.0

V_GS

E_AS

I_AR

± 20

4000

100

E_AR

dv/dt

T_J

V/ns

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

4.8

-55 to + 150

T_STG

°C

300 (for 5s)

3.3 (Typical)

Weight

* Current is limited by package

For Footnotes, refer to the page 2.

2021-03-08

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7...9

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与IRHNS9A3064SCS相关器件

型号	品牌	获取价格	描述	数据表
IRHNS9A3160	INFINEON	获取价格	Rad hard, 100V, 100A, single, N-channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 300
IRHNS9A3264	INFINEON	获取价格	Rad hard, 250V, 82A, single, N-channel MOSFET, R9 in SupIR-SMD package - SupIR-SMD package
IRHNS9A7064	INFINEON	获取价格	Rad hard, 60V, 100A, single, N-Channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS9A7064SCS	INFINEON	获取价格	Rad hard, 60V, 100A, single, N-Channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS9A7160	INFINEON	获取价格	Rad hard, 100V, 100A, single, N-channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS9A7264	INFINEON	获取价格	Rad hard, 250V, 82A, single, N-channel MOSFET, R9 in SupIR-SMD package - SupIR-SMD package
IRHNS9A93064	INFINEON	获取价格	Rad hard, -60V, -100A, P-channel MOSFET, R9 in SupIR-SMD package - SupIR-SMD, 300 krad(Si)
IRHNS9A93160	INFINEON	获取价格	Rad hard, -100V, -91A, P-channel MOSFET, R9 in SupIR-SMD package - SupIR-SMD, 300 krad(Si)
IRHNS9A93260	INFINEON	获取价格	Rad hard, -200V, -62A, single, P-channel MOSFET, R9 in a SupIR-SMD package - 300 krad(Si)
IRHNS9A97160	INFINEON	获取价格	Rad hard, -100V, -91A, P-channel MOSFET, R9 in SupIR-SMD package - SupIR-SMD, 100 krad(Si)

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