Datasheet > IRHNS7460SESCS

IRHNS7460SESCS

更新时间： 2024-11-21 14:56:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	1029K
描述
Rad hard, 500V, 12A, single, N-channel MOSFET, R4 in a SupIR-SMD package - SupIR-SMD, 100 krad(Si) TID, QIRL

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IRHNS7460SESCS 数据手册

PD-97943A

IRHNS7460SE

500V, N-CHANNEL

RAD-Hard HEXFET TECHNOLOGY

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SupIR-SMD)

Product Summary

Part Number Radiation Level RDS(on)

I_D

IRHNS7460SE

100 kRads (Si)

20A

0.32

SupIR-SMD

Description

Features

 Single Event Effect (SEE) Hardened

 Ultra Low RDS(on)

Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Light Weight

IR HiRel RAD-Hard HEXFET technology provides high

performance power MOSFETs for space applications. This

technology has over a decade of proven performance and

reliability in satellite applications. These devices have been

characterized for both Total Dose and Single Event Effects

(SEE). The combination of low Rdson and low gate charge

reduces the power losses in switching applications such as

DC to DC converters and motor control. These devices

retain all of the well established advantages of MOSFETs

such as voltage control, fast switching temperature stability

of electrical parameters.

 Surface Mount

 ESD Rating: Class 3B per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Parameter

Value

Units

I_D1@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 12V, T_C= 100°C Continuous Drain Current

I_DM@ T_C= 25°C

P_D@ T_C= 25°C

Pulsed Drain Current 

Maximum Power Dissipation

300

W/°C

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

2.4

V_GS

E_AS

I_AR

± 20

500

E_AR

dv/dt

T_J

V/ns

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

3.8

-55 to + 150

T_STG

°C

300 (for 5s)

3.3 (Typical)

Weight

For Footnotes, refer to the page 2.

2020-12-11

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7 8

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与IRHNS7460SESCS相关器件

型号	品牌	获取价格	描述	数据表
IRHNS9A3064	INFINEON	获取价格	Rad hard, 60V, 100A, single, N-Channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 300
IRHNS9A3064SCS	INFINEON	获取价格	Rad hard, 60V, 100A, single, N-Channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 300
IRHNS9A3160	INFINEON	获取价格	Rad hard, 100V, 100A, single, N-channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 300
IRHNS9A3264	INFINEON	获取价格	Rad hard, 250V, 82A, single, N-channel MOSFET, R9 in SupIR-SMD package - SupIR-SMD package
IRHNS9A7064	INFINEON	获取价格	Rad hard, 60V, 100A, single, N-Channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS9A7064SCS	INFINEON	获取价格	Rad hard, 60V, 100A, single, N-Channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS9A7160	INFINEON	获取价格	Rad hard, 100V, 100A, single, N-channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS9A7264	INFINEON	获取价格	Rad hard, 250V, 82A, single, N-channel MOSFET, R9 in SupIR-SMD package - SupIR-SMD package
IRHNS9A93064	INFINEON	获取价格	Rad hard, -60V, -100A, P-channel MOSFET, R9 in SupIR-SMD package - SupIR-SMD, 300 krad(Si)
IRHNS9A93160	INFINEON	获取价格	Rad hard, -100V, -91A, P-channel MOSFET, R9 in SupIR-SMD package - SupIR-SMD, 300 krad(Si)

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