Datasheet > IRHNS7460SE

IRHNS7460SE

更新时间： 2024-11-06 14:56:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	1029K
描述
Rad hard, 500V, 12A, single, N-channel MOSFET, R4 in a SupIR-SMD package - SupIR-SMD, 100 krad(Si) TID, COTS

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRHNS7460SE 数据手册

PD-97943A

IRHNS7460SE

500V, N-CHANNEL

RAD-Hard HEXFET TECHNOLOGY

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SupIR-SMD)

Product Summary

Part Number Radiation Level RDS(on)

I_D

IRHNS7460SE

100 kRads (Si)

20A

0.32

SupIR-SMD

Description

Features

 Single Event Effect (SEE) Hardened

 Ultra Low RDS(on)

Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Light Weight

IR HiRel RAD-Hard HEXFET technology provides high

performance power MOSFETs for space applications. This

technology has over a decade of proven performance and

reliability in satellite applications. These devices have been

characterized for both Total Dose and Single Event Effects

(SEE). The combination of low Rdson and low gate charge

reduces the power losses in switching applications such as

DC to DC converters and motor control. These devices

retain all of the well established advantages of MOSFETs

such as voltage control, fast switching temperature stability

of electrical parameters.

 Surface Mount

 ESD Rating: Class 3B per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Parameter

Value

Units

I_D1@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 12V, T_C= 100°C Continuous Drain Current

I_DM@ T_C= 25°C

P_D@ T_C= 25°C

Pulsed Drain Current 

Maximum Power Dissipation

300

W/°C

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

2.4

V_GS

E_AS

I_AR

± 20

500

E_AR

dv/dt

T_J

V/ns

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

3.8

-55 to + 150

T_STG

°C

300 (for 5s)

3.3 (Typical)

Weight

For Footnotes, refer to the page 2.

2020-12-11

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRHNS7460SE相关器件

型号	品牌	获取价格	描述	数据表
IRHNS7460SESCS	INFINEON	获取价格	Rad hard, 500V, 12A, single, N-channel MOSFET, R4 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS9A3064	INFINEON	获取价格	Rad hard, 60V, 100A, single, N-Channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 300
IRHNS9A3064SCS	INFINEON	获取价格	Rad hard, 60V, 100A, single, N-Channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 300
IRHNS9A3160	INFINEON	获取价格	Rad hard, 100V, 100A, single, N-channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 300
IRHNS9A3264	INFINEON	获取价格	Rad hard, 250V, 82A, single, N-channel MOSFET, R9 in SupIR-SMD package - SupIR-SMD package
IRHNS9A7064	INFINEON	获取价格	Rad hard, 60V, 100A, single, N-Channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS9A7064SCS	INFINEON	获取价格	Rad hard, 60V, 100A, single, N-Channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS9A7160	INFINEON	获取价格	Rad hard, 100V, 100A, single, N-channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS9A7264	INFINEON	获取价格	Rad hard, 250V, 82A, single, N-channel MOSFET, R9 in SupIR-SMD package - SupIR-SMD package
IRHNS9A93064	INFINEON	获取价格	Rad hard, -60V, -100A, P-channel MOSFET, R9 in SupIR-SMD package - SupIR-SMD, 300 krad(Si)

与IRHNS7460SE相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

9
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHNS7460SE

IRHNS7460SE 数据手册

与IRHNS7460SE相关器件

与IRHNS7460SE相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHNS7460SE

IRHNS7460SE 数据手册

与IRHNS7460SE相关器件

与IRHNS7460SE相关文章

您还可以找

您在本页遇到什么问题？