Datasheet > IRHNS67260

IRHNS67260

更新时间： 2024-11-21 14:56:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	1453K
描述
Rad hard, 200V, 56A, single, N-channel MOSFET, R6 in a SupIR-SMD package - SupIR-SMD, 100 krad(Si) TID, COTS

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IRHNS67260 数据手册

IRHNS67260 (JANSR2N7583U2A)

Radiation Hardened Power MOSFET

Surface Mount (SupIR-SMD™)

PD-97907B

200V, 56A, N-channel, R6 Technology

Product Summary

Features

 Single event effect (SEE) hardened

(up to LET of 90 MeV·cm²/mg)

 Low R_DS(on)



BV_DSS: 200V

I_D: 56A

R_DS(on),max: 28m

Q_Gmax: 240nC

 Low total gate charge

 Simple drive requirements

 Hermetically sealed

REF: MIL-PRF-19500/760

 Ceramic package

 Light weight

 Surface mount

 ESD rating: Class 3A per MIL-STD-750, Method 1020

Potential Applications

 DC-DC converter

 Motor drives

SupIR-SMD™

 Electric propulsion

Product Validation

Qualified according to MIL-PRF-19500 for space applications

Description

IR HiRel R6 technology provides high performance power MOSFETs for space applications. These devices have

been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of

90 MeV·cm²/mg. The combination of low R_DS(on)and low gate charge reduces the power losses in switching

applications such as DC-DC converters and motor controllers. These devices retain all of the well-established

advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical

parameters.

Ordering Information

Table 1

Part number

IRHNS67260

Ordering options

Package

Screening Level

COTS

TID Level

SupIR-SMD™

100 krad(Si)

300 krad(Si)

JANSR2N7583U2A

IRHNS63260

JANS

COTS

JANSF2N7583U2A

JANS

Please read the Important Notice and Warnings at the end of this document

page 1 of 14

www.infineon.com/irhirel

2022-09-23

12 3 4 5 6 7...14

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与IRHNS67260相关器件

型号	品牌	获取价格	描述	数据表
IRHNS67260SCS	INFINEON	获取价格	Rad hard, 200V, 56A, single, N-channel MOSFET, R6 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS67264	INFINEON	获取价格	Rad hard, 250V, 50A, single, N-channel MOSFET, R6 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS67264SCS	INFINEON	获取价格	Rad hard, 250V, 50A, single, N-channel MOSFET, R6 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS7460SE	INFINEON	获取价格	Rad hard, 500V, 12A, single, N-channel MOSFET, R4 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS7460SESCS	INFINEON	获取价格	Rad hard, 500V, 12A, single, N-channel MOSFET, R4 in a SupIR-SMD package - SupIR-SMD, 100
IRHNS9A3064	INFINEON	获取价格	Rad hard, 60V, 100A, single, N-Channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 300
IRHNS9A3064SCS	INFINEON	获取价格	Rad hard, 60V, 100A, single, N-Channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 300
IRHNS9A3160	INFINEON	获取价格	Rad hard, 100V, 100A, single, N-channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 300
IRHNS9A3264	INFINEON	获取价格	Rad hard, 250V, 82A, single, N-channel MOSFET, R9 in SupIR-SMD package - SupIR-SMD package
IRHNS9A7064	INFINEON	获取价格	Rad hard, 60V, 100A, single, N-Channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 100

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