PD-97880B
IRHNS67164
JANSR2N7581U2A
150V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SupIR-SMD)
REF: MILR-PRF-19500/760
6TECHNOLOGY
Product Summary
Part Number
IRHNS67164
IRHNS63164
Radiation Level RDS(on)
ID
QPL Part Number
100 kRads(Si)
300 kRads(Si)
56A*
56A*
JANSR2N7581U2A
JANSF2N7581U2A
0.018
0.018
SupIR-SMD
Features
Description
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Fast Switching
Simple Drive Requirements
Hermetically Sealed
Ceramic Package
Light Weight
Surface Mount
ESD Rating: Class 3A per MIL-STD-750, Method 1020
IR HiRel R6 technology provides high performance power
MOSFETs for space applications. These devices have
been characterized for both Total Dose and Single Event
Effect (SEE) with useful performance up to LET of 90
(MeV/(mg/cm2). The combination of low RDS(on) and low
gate charge reduces the power losses in switching
applications such as DC-DC converters and motor
controllers. These devices retain all of the well established
advantages of MOSFETs such as voltage control, fast
switching, ease of paralleling and temperature stability of
electrical parameters.
Absolute Maximum Ratings
Pre-Irradiation
Symbol
Value
Parameter
Units
ID1 @ VGS = 12V, TC = 25°C Continuous Drain Current
ID2 @ VGS = 12V, TC = 100°C Continuous Drain Current
56*
A
49
224
IDM @ TC = 25°C
PD @ TC = 25°C
Pulsed Drain Current
Maximum Power Dissipation
250
W
W/°C
V
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
2.0
VGS
EAS
IAR
±20
283
mJ
A
56
EAR
dv/dt
TJ
25
mJ
V/ns
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
7.5
-55 to + 150
TSTG
°C
g
300 (for 5s)
3.3 (Typical)
Weight
* Current is limited by package
For Footnotes, refer to the page 2.
1
2020-04-13
International Rectifier HiRel Products, Inc.