IRHNA58Z60PBF

更新时间： 2024-11-06 12:59:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
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8页	126K
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IRHNA58Z60PBF 数据手册

ꢁ

PD - 91787H

IRHNA57Z60

JANSR2N7467U2

30V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-2)

^{REF: MIL}5^{-PRF-19500/683}

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

IRHNA57Z60 100K Rads (Si) 0.0035Ω 75A* JANSR2N7467U2

IRHNA53Z60 300K Rads (Si) 0.0035Ω 75A* JANSF2N7467U2

IRHNA54Z60 500K Rads (Si) 0.0035Ω 75A* JANSG2N7467U2

IRHNA58Z60 1000K Rads (Si) 0.0040Ω 75A* JANSH2N7467U2

SMD-2

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space

applications. These devices have been characterized

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

Features:

Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

of low R

and low gate charge reduces the

DS(on)

power losses in switching applications such as DC

to DC converters and motor control. These devices

retain all of the well established advantages of

MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of

electrical parameters.

Ceramic Package

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

75*

= 12V, T = 100°C Continuous Drain Current

75*

300

Pulsed Drain Current À

Max. Power Dissipation

@ T = 25°C

250

W/°C

Linear Derating Factor

2.0

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

500

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

V/ns

dv/dt

0.83

-55 to 150

^oC

Storage Temperature Range

STG

Pckg. Mounting Surface Temp.

Weight

300 (for 5s)

3.3 (Typical)

* Current is limited by package

For footnotes refer to the last page

www.irf.com

04/24/06

12 3 4 5 6 7 8

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