5秒后页面跳转
IRHM9160 PDF预览

IRHM9160

更新时间: 2024-11-04 22:48:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
4页 95K
描述
TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.087ohm, Id=-35*A)

IRHM9160 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:FLANGE MOUNT, S-XSFM-P3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.16
其他特性:HIGH RELIABILITY雪崩能效等级(Eas):500 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):35 A
最大漏极电流 (ID):35 A最大漏源导通电阻:0.075 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-254AA
JESD-30 代码:S-XSFM-P3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:SQUARE
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):250 W
最大脉冲漏极电流 (IDM):140 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:PIN/PEG
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRHM9160 数据手册

 浏览型号IRHM9160的Datasheet PDF文件第2页浏览型号IRHM9160的Datasheet PDF文件第3页浏览型号IRHM9160的Datasheet PDF文件第4页 
Previous Datasheet  
Index  
Next Data Sheet  
Provisional Data Sheet No. PD-9.1415  
REPETITIVE AVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTOR  
IRHM9160  
P-CHANNEL  
RAD HARD  
-100 Volt, 0.087, RAD HARD HEXFET  
Product Summary  
International Rectifier’s P-channel RAD HARD tech-  
nology HEXFETs demonstrate excellent threshold  
voltage stability and breakdown voltage stability at  
total radiation doses as high as 105 Rads (Si). Under  
Part Number  
BVDSS  
RDS(on)  
ID  
IRHM9160  
-100V  
0.087 -35*A  
identical pre- and post-radiation test conditions, In- Features:  
Radiation Hardened up to 1 x 105 Rads (Si)  
Single Event Burnout (SEB) Hardened  
Single Event Gate Rupture (SEGR) Hardened  
Gamma Dot (Flash X-Ray) Hardened  
Neutron Tolerant  
Identical Pre- and Post-Electrical Test Conditions  
Repetitive Avalanche Rating  
Dynamic dv/dt Rating  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Electrically Isolated  
ternational Rectifier’s P-channelRAD HARD HEXFETs  
retain identical electrical specifications up to 1 x 105  
Rads (Si) total dose. No compensation in gate drive  
circuitry is required. These devices are also capable  
of surviving transient ionization pulses as high as 1 x  
1012 Rads (Si)/Sec, and return to normal operation  
within a few microseconds. Single Event Effect, (SEE),  
testing of International Rectifiers P-channel RAD  
HARD HEXFETs has demonstrated virtual immunity  
to SEE failure. Since the P-channel RAD HARD pro-  
cess utilizes International Rectifier’s patented HEXFET  
technology, the user can expect the highest quality  
and reliability in the industry.  
P-channel RAD HARD HEXFET transistors also fea-  
ture all of the well-established advantages of MOS-  
FETs, such as voltage control, very fast switching, ease  
of paralleling and temperature stability of the electri-  
cal parameters.  
Ceramic Eyelets  
They are well-suited for applications such as switch-  
ing power supplies, motor controls, inverters, chop-  
pers, audio amplifiers and high-energy pulse circuits  
in space and weapons environments.  
Pre-Radiation  
Absolute Maximum Ratings  
Parameter  
= -12V, T = 25°C Continuous Drain Current  
C
IRHM9160  
-35*  
Units  
I
@ V  
D
GS  
A
I
D
@ V  
= -12V, T = 100°C Continuous Drain Current  
-22  
GS  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
Linear Derating Factor  
-140  
250  
DM  
@ T = 25°C  
P
D
W
W/K ➄  
V
C
2.0  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy ➁  
Avalanche Current ➀  
±20  
GS  
E
500  
mJ  
AS  
I
-35  
A
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➂  
Operating Junction  
25  
mJ  
AR  
dv/dt  
-5.5  
V/ns  
T
-55 to 150  
J
T
Storage Temperature Range  
Lead Temperature  
STG  
oC  
g
(0.063 in. (1.6mm) from  
case for 10 sec.)  
9.3 (typical)  
300  
Weight  
Notes: See Page 4.  
To Order  
*I current limited by pin diameter  
D
 
 

IRHM9160 替代型号

型号 品牌 替代类型 描述 数据表
JANSR2N7425 INFINEON

完全替代

Rad hard, -100V, -35A, single, P-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 100
JANSF2N7425 INFINEON

功能相似

Rad hard, -100V, -35A, single, P-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 300

与IRHM9160相关器件

型号 品牌 获取价格 描述 数据表
IRHM9230 INFINEON

获取价格

TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A)
IRHM9230D INFINEON

获取价格

Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Me
IRHM9230DPBF INFINEON

获取价格

Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Me
IRHM9230U INFINEON

获取价格

Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Me
IRHM9230UPBF INFINEON

获取价格

Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Me
IRHM9250 INFINEON

获取价格

RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA)
IRHM9250DPBF INFINEON

获取价格

暂无描述
IRHM9250SCSPBF INFINEON

获取价格

Power Field-Effect Transistor, 14A I(D), 200V, 0.33ohm, 1-Element, P-Channel, Silicon, Met
IRHM9250U INFINEON

获取价格

Power Field-Effect Transistor, 14A I(D), 200V, 0.33ohm, 1-Element, P-Channel, Silicon, Met
IRHM9260 INFINEON

获取价格

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)