是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, S-XSFM-P3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.16 |
其他特性: | HIGH RELIABILITY | 雪崩能效等级(Eas): | 500 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (Abs) (ID): | 35 A |
最大漏极电流 (ID): | 35 A | 最大漏源导通电阻: | 0.075 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-254AA |
JESD-30 代码: | S-XSFM-P3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | SQUARE |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 250 W |
最大脉冲漏极电流 (IDM): | 140 A | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | PIN/PEG |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
JANSR2N7425 | INFINEON |
完全替代 |
Rad hard, -100V, -35A, single, P-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 100 | |
JANSF2N7425 | INFINEON |
功能相似 |
Rad hard, -100V, -35A, single, P-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 300 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHM9230 | INFINEON |
获取价格 |
TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A) | |
IRHM9230D | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Me | |
IRHM9230DPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Me | |
IRHM9230U | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Me | |
IRHM9230UPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Me | |
IRHM9250 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) | |
IRHM9250DPBF | INFINEON |
获取价格 |
暂无描述 | |
IRHM9250SCSPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 14A I(D), 200V, 0.33ohm, 1-Element, P-Channel, Silicon, Met | |
IRHM9250U | INFINEON |
获取价格 |
Power Field-Effect Transistor, 14A I(D), 200V, 0.33ohm, 1-Element, P-Channel, Silicon, Met | |
IRHM9260 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) |