型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHM9150 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) | |
IRHM9150D | ETC |
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TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 21A I(D) | TO-254VAR | |
IRHM9150SCS | INFINEON |
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Power Field-Effect Transistor, 22A I(D), 100V, 0.085ohm, 1-Element, P-Channel, Silicon, Me | |
IRHM9150U | ETC |
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TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 21A I(D) | TO-254VAR | |
IRHM9150UPBF | INFINEON |
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暂无描述 | |
IRHM9160 | INFINEON |
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TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.087ohm, Id=-35*A) | |
IRHM9230 | INFINEON |
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TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A) | |
IRHM9230D | INFINEON |
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Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Me | |
IRHM9230DPBF | INFINEON |
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Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Me | |
IRHM9230U | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Me |