Datasheet > IRHM9064SCS

IRHM9064SCS

更新时间： 2024-09-23 19:50:43

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
8页	118K
描述
Power Field-Effect Transistor, 35A I(D), 60V, 0.053ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

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IRHM9064SCS 数据手册

PD - 91438A

IRHM9064

IRHM 93064

JANSR2N7424

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET^®TRANSISTOR

P-CHANNEL

RAD HARD

-60 Volt, 0.05Ω, RAD HARD HEXFET

Product Summary

Part Number

IRHM9064

International Rectifier’s P-Channel RAD HARD technology

HEXFETs demonstrate excellent threshold voltage stability

and breakdown voltage stability at total radiation doses as

high as 3 X 10⁵Rads (Si). Under identical pre- and post-

radiationtestconditions,InternationalRectifier’sP-ChannelRAD

HARD HEXFETs retain identical electrical specifications up

to 1 x 10⁵Rads (Si) total dose. No compensation in gate drive

circuitry is required. These devices are also capable of surviv-

ing transient ionization pulses as high as 1 x 10¹²Rads (Si)/

Sec, and return to normal operation within a few microsec-

onds. Single Event Effect (SEE) testing of International Recti-

fier P-Channel RAD HARD HEXFETs has demonstrated

immunity to SEE failure. Since the P-Channel RAD HARD

processutilizesInternationalRectifier’spatentedHEXFETtech-

nology, the user can expect the highest quality and reliability in

the industry.

BVDSS

-60V

RDS(on)

0.05Ω

-35A

IRHM93064

-60V

Features:

n Radiation Hardened up to 1 x 10⁵Rads (Si)

n Single Event Burnout (SEB) Hardened

n Single Event Gate Rupture (SEGR) Hardened

n Gamma Dot (Flash X-Ray) Hardened

n Neutron Tolerant

n Identical Pre- and Post-Electrical Test Conditions

n Repetitive Avalanche Rating

n Dynamic dv/dt Rating

n Simple Drive Requirements

n Ease of Paralleling

P-Channel RAD HARD HEXFET transistors also feature all

of the well-established advantages of MOSFETs, such as

voltage control, very fast switching, ease of paralleling and

temperature stability of the electrical parameters. They are

well-suited for applications such as switching power supplies,

motor controls, inverters, choppers, audio amplifiers and high-

energy pulse circuits in space and weapons environments.

n Hermetically Sealed

n Electrically Isolated

n Ceramic Eyelets

Pre-Irradiation

Absolute Maximum Ratings

Parameter

IRHM9064/IRHM93064

Units

@ V

= -12V, T = 25°C Continuous Drain Current

-35

@ V

= -12V, T = 100°C Continuous Drain Current

-30

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

-192

250

@ T = 25°C

W/°C

2.0

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

±20

500

-35

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

V/ns

dv/dt

-5.5

-55 to 150

Storage Temperature Range

Package Mounting Surface Temperature

Weight

^oC

STG

300 ( for 5 Sec.)

9.3 (typical)

www.irf.com

7/6/98

12 3 4 5 6 7 8

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与IRHM9064SCS相关器件

型号	品牌	获取价格	描述	数据表
IRHM9064U	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.053ohm, 1-Element, P-Channel, Silicon, Met
IRHM9064UPBF	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.053ohm, 1-Element, P-Channel, Silicon, Met
IRHM9130	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET / 100V, P-CHANNEL
IRHM9130D	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 11A I(D) \| TO-254VAR
IRHM9130U	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 11A I(D) \| TO-254VAR
IRHM9130UPBF	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.325ohm, 1-Element, P-Channel, Silicon, Me
IRHM9150	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
IRHM9150D	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 21A I(D) \| TO-254VAR
IRHM9150SCS	INFINEON	获取价格	Power Field-Effect Transistor, 22A I(D), 100V, 0.085ohm, 1-Element, P-Channel, Silicon, Me
IRHM9150U	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 21A I(D) \| TO-254VAR

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