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IRHM9064 PDF预览

IRHM9064

更新时间： 2024-09-22 22:48:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
4页 111K
描述
TRANSISTOR P-CHANNEL(BVdss=-60V, Rds(on)=0.060ohm, Id=-35*A)

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IRHM9064 技术参数

是否Rohs认证：不符合生命周期：Active
包装说明：HERMETIC SEALED, CERAMIC PACKAGE-3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.21
Is Samacsys：N其他特性：HIGH RELIABILITY
雪崩能效等级（Eas）：500 mJ配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：60 V最大漏极电流 (Abs) (ID)：35 A
最大漏极电流 (ID)：35 A最大漏源导通电阻：0.053 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-254AA
JESD-30 代码：S-CSFM-P3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：SQUARE
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：P-CHANNEL最大功率耗散 (Abs)：250 W
最大脉冲漏极电流 (IDM)：140 A认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：PIN/PEG
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRHM9064 数据手册

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Previous Datasheet  
Index  
Next Data Sheet  
Provisional Data Sheet No. PD-9.1438  
REPETITIVE AVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTOR  
IRHM9064  
P-CHANNEL  
RAD HARD  
-60 Volt, 0.060Ω, RAD HARD HEXFET  
Product Summary  
International Rectifier’s P-Channel RAD HARD technology  
HEXFETs demonstrate excellent threshold voltage stability  
and breakdown voltage stability at total radiation doses as  
high as 105 Rads (Si). Under identical pre- and post-radia-  
tion test conditions, International Rectifier’s P-Channel RAD  
HARD HEXFETs retain identical electrical specifications up  
to 1 x 105 Rads (Si) total dose. No compensation in gate drive  
circuitry is required. These devices are also capable of sur-  
viving transient ionization pulses as high as 1 x 1012 Rads  
(Si)/Sec, and return to normal operation within a few micro-  
seconds. Single Event Effect (SEE) testing of International  
Rectifier P-Channel RAD HARD HEXFETs has demon-  
strated virtual immunity to SEE failure. Since the P-Chan-  
nel RAD HARD process utilizes International Rectifier’s  
patented HEXFET technology, the user can expect the high-  
est quality and reliability in the industry.  
Part Number  
BVDSS  
RDS(on)  
ID  
IRHM9064  
-60V  
0.060Ω  
-35*A  
Features:  
n
n
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 105 Rads (Si)  
Single Event Burnout (SEB) Hardened  
Single Event Gate Rupture (SEGR) Hardened  
Gamma Dot (Flash X-Ray) Hardened  
Neutron Tolerant  
IdenticalPre-andPost-ElectricalTestConditions  
Repetitive Avalanche Rating  
Dynamic dv/dt Rating  
SimpleDriveRequirements  
Ease of Paralleling  
HermeticallySealed  
Electrically Isolated  
P-Channel RAD HARD HEXFET transistors also feature  
all of the well-established advantages of MOSFETs, such  
as voltage control, very fast switching, ease of paralleling  
and temperature stability of the electrical parameters.They  
are well-suited for applications such as switching power  
supplies, motor controls, inverters, choppers, audio amplifi-  
ers and high-energy pulse circuits in space and weapons  
environments.  
CeramicEyelets  
Pre-Radiation  
Absolute Maximum Ratings  
Parameter  
= -12V, T = 25°C Continuous Drain Current  
IRHM9064  
-35*  
Units  
I
@ V  
D
GS  
GS  
C
I
D
@ V  
= -12V, T = 100°C Continuous Drain Current  
-26  
A
C
I
Pulsed Drain Current   
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
-168  
250  
DM  
@ T = 25°C  
P
W
W/K ꢀ  
V
D
C
2.0  
V
± 20  
GS  
E
Single Pulse Avalanche Energy ‚  
Avalanche Current   
500  
mJ  
AS  
I
-35*  
A
AR  
E
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt ƒ  
Operating Junction  
25  
mJ  
AR  
dv/dt  
-5.5  
V/ns  
T
-55 to 150  
J
T
Storage Temperature Range  
STG  
oC  
g
300 (0.063 in. (1.6mm) from case for 10s  
9.3 (typical)  
Lead Temperature  
Weight  
To Order  
 
 
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与IRHM9064相关器件

型号 品牌 获取价格 描述 数据表
IRHM9064D INFINEON

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 		Power Field-Effect Transistor, 35A I(D), 60V, 0.053ohm, 1-Element, P-Channel, Silicon, Met
IRHM9064DPBF INFINEON

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 		Power Field-Effect Transistor, 35A I(D), 60V, 0.053ohm, 1-Element, P-Channel, Silicon, Met
IRHM9064PBF INFINEON

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 		暂无描述
IRHM9064SCS INFINEON

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 		Power Field-Effect Transistor, 35A I(D), 60V, 0.053ohm, 1-Element, P-Channel, Silicon, Met
IRHM9064U INFINEON

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 		Power Field-Effect Transistor, 35A I(D), 60V, 0.053ohm, 1-Element, P-Channel, Silicon, Met
IRHM9064UPBF INFINEON

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 		Power Field-Effect Transistor, 35A I(D), 60V, 0.053ohm, 1-Element, P-Channel, Silicon, Met
IRHM9130 INFINEON

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 		RADIATION HARDENED POWER MOSFET / 100V, P-CHANNEL
IRHM9130D ETC

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 		TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 11A I(D) | TO-254VAR
IRHM9130U ETC

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 		TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 11A I(D) | TO-254VAR
IRHM9130UPBF INFINEON

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 		Power Field-Effect Transistor, 11A I(D), 100V, 0.325ohm, 1-Element, P-Channel, Silicon, Me

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