Datasheet > IRHLNA77064SCSA

IRHLNA77064SCSA

更新时间： 2024-10-31 14:56:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	1096K
描述
Rad hard, 60V, 56A, single, N-channel MOSFET, R7 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QIRL

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IRHLNA77064SCSA 数据手册

PD-97177D

IRHLNA77064

2N7604U2

⁶R^{0V, N-CHANNEL}

7 ^TECHNOLOGY

RADIATION HARDENED

LOGIC LEVEL POWER MOSFET

SURFACE MOUNT (SMD-2)

Product Summary

Part Number Radiation Level RDS(on)

I_D

IRHLNA77064

IRHLNA73064

100 kRads(Si)

300 kRads(Si)

56A*

0.012

SMD-2

Description

Features

 5V CMOS and TTL Compatible

 Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

IR HiRel R7 Logic Level Power MOSFETs provide simple

solution to interfacing CMOS and TTL control circuits to

power devices in space and other radiation environments.

The threshold voltage remains within acceptable operating

limits over the full operating temperature and post

radiation. This is achieved while maintaining single event

gate rupture and single event burnout immunity.

 Ceramic package

 Light Weight

 Surface Mount

The device is ideal when used to interface directly with

most logic gates, linear IC’s, micro-controllers, and other

device types that operate from a 3.3-5V source. It may

also be used to increase the output current of a PWM,

voltage comparator or an operational amplifier where the

logic level drive signal is available.

 ESD Rating: Class 3A per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Parameter

Units

I_D1@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 12V, T_C= 100°C Continuous Drain Current

56*

224

I_DM@T_C= 25°C

P_D@T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

250

Linear Derating Factor

2.0

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 10

402

Single Pulse Avalanche Energy 

Avalanche Current 

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

V/ns

6.9

-55 to + 150

T_STG

Storage Temperature Range

Package Mounting Surface Temperature

Weight

°C

300 (for 5s)

3.3.(Typical)

* Current is limited by package

For Footnotes, refer to the page 2.

2021-04-23

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7...9

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与IRHLNA77064SCSA相关器件

型号	品牌	获取价格	描述	数据表
IRHLNA793064	INFINEON	获取价格	RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2)
IRHLNA793064SCS	INFINEON	获取价格	Power Field-Effect Transistor,
IRHLNA797064	INFINEON	获取价格	RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2)
IRHLNA797064B	INFINEON	获取价格	Power Field-Effect Transistor, 56A I(D), 60V, 0.015ohm, 1-Element, P-Channel, Silicon, Met
IRHLNA797064SCS	INFINEON	获取价格	Rad hard, -60V, -56A, single, P-channel MOSFET, R7 in a SMD-2 package - SMD-2, 100 krad(Si
IRHLNA797064SCSD	INFINEON	获取价格	Rad hard, -60V, -56A, single, P-channel MOSFET, R7 in a SMD-2 package - SMD-2, 100 krad(Si
IRHLNA797064SCV	INFINEON	获取价格	Rad hard, -60V, -56A, single, P-channel MOSFET, R7 in a SMD-2 package - SMD-2, 100 krad(Si
IRHLNA797064SCVD	INFINEON	获取价格	Rad hard, -60V, -56A, single, P-channel MOSFET, R7 in a SMD-2 package - SMD-2, 100 krad(Si
IRHLNJ73034	INFINEON	获取价格	Power Field-Effect Transistor, 22A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Met
IRHLNJ73034SCS	INFINEON	获取价格	Power Field-Effect Transistor,

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