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IRHF57034 PDF预览

IRHF57034

更新时间: 2024-11-05 03:35:39
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 137K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)

IRHF57034 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:TO-205AF, 3 PINReach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.32
其他特性:AVALANCHE RATED雪崩能效等级(Eas):270 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):12 A最大漏极电流 (ID):12 A
最大漏源导通电阻:0.048 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-39JESD-30 代码:O-MBCY-W3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):25 W最大脉冲漏极电流 (IDM):48 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON

IRHF57034 数据手册

 浏览型号IRHF57034的Datasheet PDF文件第2页浏览型号IRHF57034的Datasheet PDF文件第3页浏览型号IRHF57034的Datasheet PDF文件第4页浏览型号IRHF57034的Datasheet PDF文件第5页浏览型号IRHF57034的Datasheet PDF文件第6页浏览型号IRHF57034的Datasheet PDF文件第7页 
                                                                             
PD - 93791D  
IRHF57034  
JANSR2N7492T2  
60V, N-CHANNEL  
REF: MIL-PRF-19500/701  
TECHNOLOGY  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (TO-39)  
5
™
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
QPL Part Number  
IRHF57034 100K Rads (Si)  
IRHF53034 300K Rads (Si)  
IRHF54034 500K Rads (Si)  
0.04812A* JANSR2N7492T2  
0.04812A* JANSF2N7492T2  
0.04812A* JANSG2N7492T2  
IRHF58034 1000K Rads (Si) 0.06012A* JANSH2N7492T2  
TO-39  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space  
applications. These devices have been characterized  
Features:  
for Single Event Effects (SEE) with useful performance  
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
of low RDS(on) and low gate charge reduces the power  
losses in switching applications such as DC to DC  
converters and motor control. These devices retain  
all of the well established advantages of MOSFETs  
such as voltage control, fast switching, ease of  
paralleling and temperature stability of electrical  
parameters.  
Ultra Low RDS(on)  
Identical Pre- and Post-Electrical Test Conditions  
Repetitive Avalanche Ratings  
Dynamic dv/dt Ratings  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C Continuous Drain Current  
12*  
9.5  
48  
D
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
DM  
@ T = 25°C  
P
25  
W
W/°C  
V
D
C
0.2  
V
±20  
GS  
E
Single Pulse Avalanche Energy Á  
Avalanche Current À  
270  
mJ  
A
AS  
I
12  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
2.5  
mJ  
V/ns  
AR  
dv/dt  
9.6  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Lead Temperature  
Weight  
300 ( 0.063 in./1.6mm from case for 10s)  
0.98 (Typical)  
* Current is limited by package  
For footnotes refer to the last page  
www.irf.com  
1
04/27/06  

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