Datasheet > IRGPF50

IRGPF50

更新时间： 2024-10-31 23:58:55

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IRGPF50 数据手册

PD - 9.767A

IRGPF50F

INSULATED GATE BIPOLAR TRANSISTOR

Fast Speed IGBT

Features

• Switching-loss rating includes all "tail" losses

• Optimized for medium operating frequency (1 to

10kHz) See Fig. 1 for Current vs. Frequency curve

V_CES= 900V

_CE(sat)≤ 2.7V

@V_GE= 15V, I_C= 28A

n-channel

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have

higher usable current densities than comparable bipolar transistors, while at

the same time having simpler gate-drive requirements of the familiar power

MOSFET. They provide substantial benefits to a host of high-voltage, high-

current applications.

TO-247AC

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

900

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

100

I_LM

Clamped Inductive Load Current

Gate-to-Emitter Voltage

100

V_GE

±20

E_ARV

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

P_D@ T_C= 25°C

200

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting torque, 6-32 or M3 screw.

°C

300 (0.063 in. (1.6mm) from case)

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Min.

------

Typ.

------

Max.

0.64

------

Units

°C/W

R_θJC

R_θCS

R_θJA

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Weight

0.24

------

6 (0.21)

------

g (oz)

Revision 0

C-267

12 3 4 5 6

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