Datasheet > IRGPF30F

IRGPF30F

更新时间： 2024-10-31 22:51:39

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管栅
页数	文件大小	规格书
6页	227K
描述
INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=11A)

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PD - 9.1026

IRGPF30F

INSULATED GATE BIPOLAR TRANSISTOR

Fast Speed IGBT

Features

• Switching-loss rating includes all "tail" losses

• Optimized for medium operating frequency (1 to

10kHz) See Fig. 1 for Current vs. Frequency

V_CES= 900V

curve

_CE(sat)≤ 3.7V

@V_GE= 15V, I_C= 11A

n-channel

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have

higher usable current densities than comparable bipolar transistors, while at

the same time having simpler gate-drive requirements of the familiar power

MOSFET. They provide substantial benefits to a host of high-voltage, high-

current applications.

TO-247AC

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

900

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

I_LM

Clamped Inductive Load Current

Gate-to-Emitter Voltage

±20

V_GE

E_ARV

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

P_D@ T_C= 25°C

100

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting torque, 6-32 or M3 screw.

°C

300 (0.063 in. (1.6mm) from case)

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Min.

—

Typ.

—

Max.

1.2

—

Units

°C/W

R_θJC

R_θCS

R_θJA

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Weight

—

0.24

—

6 (0.21)

—

g (oz)

Revision 0

C-255

To Order

12 3 4 5 6

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