Datasheet > IRGC3B60KB

IRGC3B60KB

更新时间： 2024-11-26 20:50:35

品牌	Logo	应用领域
英飞凌 - INFINEON		电动机控制栅晶体管
页数	文件大小	规格书
1页	49K
描述
Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, DIE-2

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技术参数
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IRGC3B60KB 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.81
集电极-发射极最大电压：	600 V	门极发射器阈值电压最大值：	5.5 V
极性/信道类型：	N-CHANNEL	子类别：	Insulated Gate BIP Transistors
Base Number Matches：	1

IRGC3B60KB 数据手册

PD - 94612

IRGC3B60KB

Die in Wafer Form

600V

Features

GEN5 Non Punch Through (NPT) Technology

Low V_CE(on)

10µs Short Circuit Capability

Square RBSOA

I_C(nom)= 3.0A

V_{CE(on) typ.}=1.8V @

I_C(nom)@ 25°C

Positive V_CE(on)Temperature Coefficient

MotorControlIGBT

Short Circuit Rated

150mm Wafer

Benefits

Benchmark Efficiency for Motor Control Applications

Rugged Transient Performance

Excellent Current Sharing in Parallel Operation

Qualified for Industrial Market

Reference Standard IR Package Part: IRGB4B60K

Electrical Characteristics (Wafer Form)

Parameter

V_{CE (on)}

V_(BR)CES

V_GE(th)

I_CES

Description

Guaranteed (min, max)

TestConditions

Collector-to-Emitter Saturation Voltage

Colletor-to-Emitter Breakdown Voltage

Gate Threshold Voltage

1.18V min, 1.50V max I_C= 1A, T_J= 25°C, V_GE= 15V

600V min

3.5V min, 5.5V max

10µA max

T_J= 25°C, I_CES= 1mA, V_GE= 0V

V_GE= V_CE, T_J=25°C, I_C= 250µA

T_J= 25°C, V_CE= 600V

Zero Gate Voltage Collector Current

Gate-to-Emitter Leakage Current

I_GES

± 1.1µA max

T_J= 25°C, V_GE= +/-20V

Mechanical Data

Nominal Backmetal Composition, (Thickness)

Nominal Front Metal Composition, (Thickness)

Dimensions

Al - Ti - Ni/V - Ag, (1kA - 1kA - 4kA - 6kA)

99% Al/1% Si, (4µm)

0.085" x 0.090"

Wafer Diameter

150mm, with std. < 100 > flat

85µm, +/- 7µm

Wafer Thickness, Tolerance

Relevant Die Mechanical Dwg. Number

Minimum Street Width

01-5554

100µm

Reject Ink Dot Size

0.25mm diameter minimum

Consistent throughout same wafer lot

Store in original container, in dessicated

nitrogen, with no contamination

For optimum electrical results, die attach

temperature should not exceed 300°C

Ink Dot Location

Recommended Storage Environment

Recommended Die Attach Conditions

Die Outline

2.16

NOTES:

[.085]

1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

2. CONTROLLING DIMENSION: [INCH].

3. LETTER DESIGNATION:

1.19

[.047]

S = SOURCE

G = GAT E

SK = SOURCE KELVIN

IS = CURRENTSENSE

E = EMITTER

4. DIMENSIONAL TOLERANCES:

BONDINGPADS: < 0.635 TOLERANCE

+ /- 0.013

< [.0250] TOLERANCE = + /- [.0005]

> 0.635 TOLERANCE + /- 0.025

EMITTER

WIDT H

1.24 2.29

[.048][.090]

LENGTH

> [.0250] TOLERANCE = + /- [.0010]

0.64

GAT E

[.025]

OVERALL DIE:

WIDTH

< 1.270 TOLERANCE = + /- 0.102

< [.050] TOLERANCE = + /- [.004]

> 1.270 TOLERANCE = + /- 0.203

> [.050] TOLERANCE = + /- [.008]

LENGTH

0.66

[.026]

www.irf.com

03/03/03

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与IRGC3B60KB相关器件

型号	品牌	获取价格	描述	数据表
IRGC3B60KBPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, DIE-2
IRGC4060B	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
IRGC4062B	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
IRGC4063B	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
IRGC4064B	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
IRGC4066B	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel,
IRGC4069B	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
IRGC48B120KBPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, 0.340 X 0.345 INCH, DIE-2
IRGC49B120KB	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1.2KV V(BR)CES \| CHIP
IRGC49B120KBPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, 150 MM, WAFER

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