Datasheet > IRGC14C40LD

IRGC14C40LD

更新时间： 2024-11-25 23:58:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管电视双极性晶体管栅汽车点火
页数	文件大小	规格书
1页	20K
描述
TRANSISTOR \| IGBT \| N-CHAN \| 430V V(BR)CES \| CHIP

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中文翻译

获取价格

数据手册

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IRGC14C40LD 数据手册

PD - 94060

IRGC14C40LB

IRGC14C40LC

IRGC14C40LD

Ignition IGBT

Die in Wafer Form

IGBT with on-chip Gate-Emitter and Gate-Collector clamps

Features

NOTES: 1) Part number IRGC14C40LB are die in wafer form

probed and uncut; IRGC14C40LC are die on film probed and

cut; and IRGC14C40LD are probed die in wafle pack. 2) Refer-

ence packaged parts are IRGS14C40L, IRGSL14C40L, and

IRGB14C40L.

•Most Rugged in Industry

•Logic-Level Gate Drive

•> 6KV ESD Gate Protection

•Low Saturation Voltage

TERMINAL DIAGRAM

C ollecto r

•High Self-clamped Inductive Switching Energy

•Qualified for the Automotive Qualified [Q101] .

Description

The advanced IGBT process family includes a MOS gated,

N-channel logic level device which is intended for coil-on-plug

automotive ignition applications and small-engine ignition

circuits. Unique features include on-chip active voltage

clamps between the Gate-Emitter and Gate-Collector which

provide over voltage protection capability in ignition circuits.

Packaged Characteristics:

•BV_{CES =}370V min, 430V max

•I_C@ T_C= 110°C = 14A

G ate

•V_CE(on)typ= 1.2V @7A @25°C

•I_L(min)=11.5A @25°C,L=4.7mH

E m itter

Electrical Characteristics (Wafer Form)

Parameter

V_{CE (on)}

BV_CES

V_GE(th)

I_CES

Description

Guaranteed (min, max)

Test Conditions @ T_J= 25°C

Collector-to-Emitter Saturation Voltage

Colletor-to-Emitter Breakdown Voltage

Gate Threshold Voltage

2.65V max

I_C= 10A, V_GE= 4.5V

370V min, 430V max

1.2V min, 2.4V max

10µA max

R_G= 1K ohm, I_CES= 25mA, V_GE= 0V

V_GE= V_CE, I_C= 1mA

Zero Gate Voltage Collector Current

Gate-to-Emitter Leakage Current

R_G= 1K ohm, V_CE= 300V

I_GES

±0.32mA min, ±1mA max V_GE= +/-10V

T_J

T_STG

Operating Junction and Storage

Temperature Range

-40°C to 175°C

Mechanical Data

Nominal Backmetal Composition, (Thickness)

Nominal Front Metal Composition, (Thickness)

Dimensions

Cr - Ni/V - Ag, (0.1µm - 0.2µm - 0.25µm)

99% Al/1% Si, (4µm)

0.141" x 0.164"

Wafer Diameter

150mm, with std. < 100 > flat

.015" +/- .003"

Wafer Thickness, Tolerance

Relevant Die Mechanical Dwg. Number

Minimum Street Width

01-5467

100µm

Reject Ink Dot Size

0.25mm diameter minimum

Consistent throughout same wafer lot

Store in original container, in dessicated

nitrogen, with no contamination

For optimum electrical results, die attach

temperature should not exceed 300°C

Ink Dot Location

Recommended Storage Environment

Recommended Die Attach Conditions

Die Outline

NOTES:

1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

2. CONTROLLING DIMENSION: [INCH].

3. LETTER DESIGNATION:

3.581

[.141]

S = SOURCE

G = GAT E

SK = SOURCE KELVIN

IS = CURRENTSENSE

E = EMITTER

0.932

[.037]

0.943

[.037]

4. DIMENSIONAL TOLERANCES:

BONDING PADS:

WIDT H

0.635 TOLERANCE

[.0250] TOLERANCE = + /- [.0005]

0.635 TOLERANCE + /- 0.025

[.0250] TOLERANCE = + /- [.0010]

= + /- 0.013

LENGTH

OVERALL DIE:

WIDT H

1.270 TOLERANCE

[.050] TOLERANCE = + /- [.004]

1.270 TOLERANCE + /- 0.203

[.050] TOLERANCE = + /- [.008]

= + /- 0.102

4.166

[.164]

LENGTH

0.562

[.022]

0.762

[.030]

www.irf.com

12/19/00

中文翻译

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与IRGC14C40LD相关器件

型号	品牌	获取价格	描述	数据表
IRGC14C40LDPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 370V V(BR)CES, N-Channel, DIE-2
IRGC15B120KB	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1.2KV V(BR)CES \| CHIP
IRGC15B120UB	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1.2KV V(BR)CES \| CHIP
IRGC15B120UBPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, 150 MM, WAFER
IRGC15B60KB	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, 150 MM, WAFER
IRGC16B120KB	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, 0.205 X 0.205 INCH, DIE-2
IRGC16B120KBPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, 0.205 X 0.205 INCH, DIE-2
IRGC20B60KB	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, 150 MM, WAFER
IRGC20B60KBPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, 150 MM, WAFER
IRGC25B120KB	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1.2KV V(BR)CES \| CHIP

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