Datasheet > 晶体管 > IGBT> IRG4PH40U

IRG4PH40U

更新时间： 2024-11-24 22:16:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率控制瞄准线双极性晶体管栅局域网
页数	文件大小	规格书
8页	163K
描述
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A)

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IRG4PH40U 数据手册

PD - 91612C

IRG4PH40U

Ultra Fast Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Features

• UltraFast: Optimized for high operating

frequencies up to 40 kHz in hard switching,

>200 kHz in resonant mode

_CES= 1200V

• New IGBT design provides tighter

parameter distribution and higher efficiency than

previous generations

• Optimized for power conversion; SMPS, UPS

and welding

V_{CE(on) typ.}= 2.43V

@V_GE= 15V, I_C= 21A

n-channel

• Industry standard TO-247AC package

Benefits

• Higher switching frequency capability than

competitive IGBTs

• Highest efficiency available

• Much lower conduction losses than MOSFETs

• More efficient than short circuit rated IGBTs

TO-247AC

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

1200

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

I_LM

Clamped Inductive Load Current

Gate-to-Emitter Voltage

V_GE

270

E_ARV

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

P_D@ T_C= 25°C

160

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to + 150

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw.

300 (0.063 in. (1.6mm) from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

0.77

–––

Units

°C/W

g (oz)

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Weight

0.24

–––

6 (0.21)

–––

www.irf.com

7/7/2000

12 3 4 5 6 7 8

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与IRG4PH40U相关器件

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IRG4PH40UD2PBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PH40UD-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD
IRG4PH40UD-EPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD