Datasheet > IRG4PH40S

IRG4PH40S

更新时间： 2024-11-20 23:58:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管双极性晶体管
页数	文件大小	规格书
8页	156K
描述
TRANSISTOR \| IGBT \| N-CHAN \| 1.2KV V(BR)CES \| 20A I(C) \| TO-247AC

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中文翻译

获取价格

数据手册

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IRG4PH40S 数据手册

PD -91808

IRG4PH40S

Standard Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Features

• Extremely low on state voltage drop 1.0V typical at

5.0A

V_CES= 1200V

• Extremely low V_CE(on)variation from lot to lot

• Industry standard TO-247AC package

V_{CE(on) typ.}= 1.46V

@V_GE= 15V, I_C= 20A

N-channel

Benefits

• High current density systems

• Optimized for specific application conditions

• Lower voltage drop than many high voltage MOSFETs

TO-247AC

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Gate-to-Emitter Voltage

1200

I_C@ T_C= 25°C

_C@ T_C= 100°C

I_CM

I_LM

V_GE

±20

E_ARV

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

250

P_D@ T_C= 25°C

160

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting torque, 6-32 or M3 screw.

°C

300 (0.063 in. (1.6mm) from case)

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

0.77

–––

Units

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Weight

0.24

°C/W

–––

6.0(0.21)

–––

g (oz)

www.irf.com

9/23/98

12 3 4 5 6 7 8

中文翻译

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与IRG4PH40S相关器件

型号	品牌	获取价格	描述	数据表
IRG4PH40SD	INFINEON	获取价格	Fit Rate / Equivalent Device Hours
IRG4PH40U	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A)
IRG4PH40UD	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)ty
IRG4PH40UD2	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PH40UD2-E	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PH40UD2-EP	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PH40UD2-EPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PH40UD2-EPBF_15	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PH40UD2-EPPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, LEAD FRE
IRG4PH40UD2PBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE