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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| IRG4PH40KDPBF | INFINEON |
获取价格 |
INSUALATED GATE BIPOLAR TRANSISTOR WITH YLTRAFAST SOFT RECOVERY DIODE |
|
| IRG4PH40K-E | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD |
|
| IRG4PH40KPBF | INFINEON |
获取价格 |
Short Circuit Rated UltraFast IGBT |
|
| IRG4PH40MD | INFINEON |
获取价格 |
Fit Rate / Equivalent Device Hours |
|
| IRG4PH40S | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 20A I(C) | TO-247AC |
|
| IRG4PH40SD | INFINEON |
获取价格 |
Fit Rate / Equivalent Device Hours |
|
| IRG4PH40U | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) |
|
| IRG4PH40UD | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)ty |
|
| IRG4PH40UD2 | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
|
| IRG4PH40UD2-E | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
|
解析光耦仿真器：升级光耦合器技术的必要性
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台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
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