Datasheet > IRG4BC30S-STRL

IRG4BC30S-STRL

更新时间： 2024-11-21 20:10:43

品牌	Logo	应用领域
英飞凌 - INFINEON		栅功率控制晶体管
页数	文件大小	规格书
9页	258K
描述
Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRG4BC30S-STRL 数据手册

PD - 95786A

IRG4BC30S-SPbF

Standard Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Features

•Standard: optimizedforminimumsaturation

voltage and low operating frequencies (< 1kHz)

• Generation 4 IGBT design provides tight

parameter distribution and high efficiency

_CES= 600V

V_{CE(on) typ.}= 1.4V

• Lead-Free

@V_GE= 15V, I_C= 18A

n-channel

Benefits

• Generation 4 IGBTs offer highest efficiency available

• IGBTsoptimizedforspecifiedapplicationconditions

D²Pak

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-EmitterBreakdownVoltage

ContinuousCollectorCurrent

Pulsed Collector Current

600

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

I_LM

Clamped Inductive Load Current

Gate-to-EmitterVoltage

±20

V_GE

E_ARV

Reverse Voltage Avalanche Energy

MaximumPowerDissipation

P_D@ T_C= 25°C

100

P_D@ T_C= 100°C MaximumPowerDissipation

T_J

OperatingJunctionand

-55 to +150

T_STG

StorageTemperatureRange

SolderingTemperature,for10seconds

°C

300 (0.063 in. (1.6mm) from case )

ThermalResistance

Parameter

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Weight

Typ.

–––

0.50

–––

Max.

1.2

–––

Units

°C/W

R_θJC

R_θCS

R_θJA

1.44

–––

g (oz)

www.irf.com

02/05/10

12 3 4 5 6 7...9

中文翻译

下载PDF

与IRG4BC30S-STRL相关器件

型号	品牌	获取价格	描述	数据表
IRG4BC30S-STRLP	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, D2PAK-3/2
IRG4BC30S-STRLPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC,
IRG4BC30S-STRR	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 18A I(C) \| TO-263AB
IRG4BC30S-STRRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC,
IRG4BC30U	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
IRG4BC30UD	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ
IRG4BC30UDHR	INFINEON	获取价格	暂无描述
IRG4BC30UDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT
IRG4BC30UPBF	INFINEON	获取价格	UltraFast Speed IGBT
IRG4BC30US	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vg