Datasheet > IRFZ14S, SiHFZ14S, SiHFZ14L

IRFZ14S, SiHFZ14S, SiHFZ14L

更新时间： 2023-12-06 20:10:06

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
11页	377K
描述
Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFZ14S, SiHFZ14S, SiHFZ14L 数据手册

浏览型号IRFZ14S, SiHFZ14S, SiHFZ14L的Datasheet PDF文件第2页

浏览型号IRFZ14S, SiHFZ14S, SiHFZ14L的Datasheet PDF文件第3页

浏览型号IRFZ14S, SiHFZ14S, SiHFZ14L的Datasheet PDF文件第4页

浏览型号IRFZ14S, SiHFZ14S, SiHFZ14L的Datasheet PDF文件第5页

浏览型号IRFZ14S, SiHFZ14S, SiHFZ14L的Datasheet PDF文件第6页

IRFZ14S, SiHFZ14S, SiHFZ14L

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Advanced process technology

• Surface-mount (IRFZ14S, SiHFZ14S)

• Low profile through-hole (SiHFZ14L)

• 175 °C operating temperature

• Fast switching

I²PAK (TO-262)

D²PAK (TO-263)

Available

• Material categorization: for definitions of

compliance please see www.vishay.com/doc?99912

Note

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details



N-Channel MOSFET

DESCRIPTION

Third generation power MOSFETs from Vishay utilize

advanced processing techniques to achieve extremely low

on resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

power MOSFETs are well known for, provides the designer

with an extremely efficient reliable device for use in a wide

variety of applications.

The D²PAK (TO-263) is a surface-mount power package

capable of accommodating die sizes up to HEX-4. It

provides the highest power capability and lowest possible

on-resistance in any existing surface-mount package. The

D²PAK (TO-263) is suitable for high current applications

because of its low internal connection resistance and can

dissipate up to 2.0 W in a typical surface-mount application.

PRODUCT SUMMARY

V_DS(V)

0.20

R_DS(on)()

V_GS= 10 V

Q_gmax. (nC)

_gs(nC)

_gd(nC)

3.1

5.8

Configuration

Single

The through-hole version (SiHFZ44L) is available for low

profile applications.

ORDERING INFORMATION

Package

D²PAK (TO-263)

SiHFZ14STRL-GE3 ^a

IRFZ14STRLPbF ^a

I²PAK (TO-262)

SiHFZ14L-GE3

Lead (Pb)-free and halogen-free

Lead (Pb)-free

SiHFZ14S-GE3

IRFZ14SPbF

Note

a. See device orientation

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

Continuous drain current

V_GSat 10 V

I_D

T_C= 100 °C

7.2

Pulsed drain current ^a

I_DM

Linear derating factor

Single pulse avalanche energy ^b

0.29

W/°C

E_AS

P_D

Maximum power dissipation

_C= 25 °C

V/ns

°C

Maximum power dissipation (PCB mount) ^e

Peak diode recovery dv/dt ^c

T_A= 25 °C

3.7

dv/dt

4.5

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^d

T_J, T_stg

-55 to +175

300

For 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. V_DD= 25 V, starting T_J= 25 °C, L = 548 μH, R_g= 25 , I_AS= 10 A (see fig. 12)

c. I_SD 10 A, di/dt  90 A/μs, V_DD V_DS, T_J 175 °C

d. 1.6 mm from case

e. When mounted on 1" square PCB (FR-4 or G-10 material)

S20-0684-Rev. D, 07-Sep-2020

Document Number: 90365

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...11

中文翻译

下载PDF

与IRFZ14S, SiHFZ14S, SiHFZ14L相关器件

型号	品牌	获取价格	描述	数据表
IRFZ14S/L	INFINEON	获取价格	Advanced Process Technology / Surface Mount (IRFZ14S)
IRFZ14SPBF	VISHAY	获取价格	Power MOSFET
IRFZ14STRL	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 10A I(D) \| TO-263AB
IRFZ14STRLPBF	VISHAY	获取价格	Power MOSFET
IRFZ14STRR	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 10A I(D) \| TO-263AB
IRFZ15	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 8.3A I(D) \| TO-220AB
IRFZ15-001	INFINEON	获取价格	Power Field-Effect Transistor, 8.3A I(D), 60V, 0.3ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ15-001PBF	INFINEON	获取价格	Power Field-Effect Transistor, 8.3A I(D), 60V, 0.3ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ15-002	INFINEON	获取价格	Power Field-Effect Transistor, 8.3A I(D), 60V, 0.3ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ15-002PBF	INFINEON	获取价格	8.3A, 60V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET

与IRFZ14S, SiHFZ14S, SiHFZ14L相关文章

LTM4644/LTM4644-1：创新的四输出同步降压微模块调节器
2024-07-02

2
2N3500：一款多用途NPN硅晶体管的全面解析
2024-07-02

2
最详细资料解析：BA5917AFP参数说明、引脚说明
2024-07-02

5
MAX232IDR数据手册：产品特性、电气参数、替代型号推荐
2024-07-02

3

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFZ14S, SiHFZ14S, SiHFZ14L

IRFZ14S, SiHFZ14S, SiHFZ14L 数据手册

与IRFZ14S, SiHFZ14S, SiHFZ14L相关器件

与IRFZ14S, SiHFZ14S, SiHFZ14L相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFZ14S, SiHFZ14S, SiHFZ14L

IRFZ14S, SiHFZ14S, SiHFZ14L 数据手册

与IRFZ14S, SiHFZ14S, SiHFZ14L相关器件

与IRFZ14S, SiHFZ14S, SiHFZ14L相关文章

您还可以找

您在本页遇到什么问题？