Datasheet > IRFW644BTM_FP001

IRFW644BTM_FP001

更新时间： 2024-11-02 21:19:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	682K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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技术参数
数据手册

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IRFW644BTM_FP001 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	not_compliant	风险等级：	5.84
配置：	Single	最大漏极电流 (Abs) (ID)：	14 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-609代码：	e3
湿度敏感等级：	1	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	139 W	子类别：	FET General Purpose Power
表面贴装：	YES	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

IRFW644BTM_FP001 数据手册

November 2001

IRFW644B / IRFI644B

250V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switching DC/DC converter and

switch mode power supplies.

•

14A, 250V, R

= 0.28Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 47 nC)

Low Crss ( typical 30 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

●

◀

▲

●

D²-PAK

IRFW Series

I²-PAK

IRFI Series

G D S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

IRFW644B / IRFI644B

Units

Drain-Source Voltage

250

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

8.9

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 30

480

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

13.9

5.5

V/ns

dv/dt

Power Dissipation (T = 25°C) *

3.13

139

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

1.11

-55 to +150

W/°C

°C

T , T

stg

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

0.9

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

θJC

θJA

62.5

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. B, November 2001

12 3 4 5 6 7...9

中文翻译

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与IRFW644BTM_FP001相关器件

型号	品牌	获取价格	描述	数据表
IRFW650B	FAIRCHILD	获取价格	200V N-Channel MOSFET
IRFW650BTM_FP001	FAIRCHILD	获取价格	Power Field-Effect Transistor, 28A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Me
IRFW654B	FAIRCHILD	获取价格	250V N-Channel MOSFET
IRFW654BTM	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IRFW654BTM_FP001	FAIRCHILD	获取价格	Power Field-Effect Transistor, 21A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Met
IRFW710	FAIRCHILD	获取价格	400V N-Channel MOSFET
IRFW710A	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal
IRFW710ATM	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IRFW710B	FAIRCHILD	获取价格	400V N-Channel MOSFET
IRFW710BTM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2A I(D), 400V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal

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