Datasheet > IRFU9014PBF

IRFU9014PBF

更新时间： 2024-11-18 12:04:59

品牌	Logo	应用领域
科盛美 - KERSEMI		晶体晶体管开关脉冲 PC 局域网
页数	文件大小	规格书
7页	4533K
描述
Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFU9014PBF 数据手册

IRFR9014, IRFU9014, SiHFR9014, SiHFU9014

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

- 60

Available

• Repetitive Avalanche Rated

R_DS(on)(Ω)

V_GS= - 10 V

0.50

RoHS*

• Surface Mount (IRFR9014/SiHFR9014)

COMPLIANT

Q_g(Max.) (nC)

• Straight Lead (IRFU9014/SiHFU9014)

_gs(nC)

3.8

• Available in Tape and Reel

Q_gd(nC)

5.1

• P-Channel

Configuration

Single

• Fast Switching

• Lead (Pb)-free Available

DESCRIPTION

DPAK

IPAK

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

(TO-252)

(TO-251)

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU/SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

P-Channel MOSFET

are possible in typical surface mount applications.

ORDERING INFORMATION

Package

DPAK (TO-252)

IRFR9014TRLPbF^a

SiHFR9014TL-E3^a

IRFR9014TRL^a

SiHFR9014TL^a

DPAK (TO-252)

IRFR9014TRPbF^a

SiHFR9014T-E3^a

IRFR9014TR^a

IPAK (TO-251)

IRFU9014PbF

SiHFU9014-E3

IRFU9014

IRFR9014PbF

SiHFR9014-E3

IRFR9014

Lead (Pb)-free

SnPb

SiHFR9014

SiHFR9014T^a

SiHFU9014

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

- 60

V_GS

_C= 25 °C

- 5.1

- 3.2

- 20

Continuous Drain Current

V_GSat 5.0 V

I_D

T_C=100°C

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.20

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

0.020

140

E_AS

I_AR

- 5.1

2.5

E_AR

T_C= 25 °C

P_D

T_A= 25 °C

2.5

dV/dt

- 4.5

- 55 to + 150

V/ns

Operating Junction and Storage Temperature Range

T_J, T_stg

°C

Soldering Recommendations (Peak Temperature)

for 10 s

260^d

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= - 25 V, starting T_J= 25 °C, L = 6.3 mH, R_G= 25 Ω, I_AS= - 5.1 A (see fig. 12).

c. I_SD≤ - 6.7 A, dI/dt ≤ 90 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

www.kersemi.com

12 3 4 5 6 7

中文翻译

下载PDF

与IRFU9014PBF相关器件

型号	品牌	获取价格	描述	数据表
IRFU9020	VISHAY	获取价格	Power MOSFET
IRFU9020	INFINEON	获取价格	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS
IRFU9020	KERSEMI	获取价格	Power MOSFET
IRFU9020PBF	KERSEMI	获取价格	Power MOSFET
IRFU9020PBF	VISHAY	获取价格	Power MOSFET
IRFU9022	VISHAY	获取价格	Power MOSFET
IRFU9022	INFINEON	获取价格	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS
IRFU9022	SAMSUNG	获取价格	Power Field-Effect Transistor, 9A I(D), 50V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal
IRFU9022PBF	VISHAY	获取价格	Power MOSFET
IRFU9024	VISHAY	获取价格	Power MOSFET

与IRFU9014PBF相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

37

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFU9014PBF

IRFU9014PBF 数据手册

与IRFU9014PBF相关器件

与IRFU9014PBF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFU9014PBF

IRFU9014PBF 数据手册

与IRFU9014PBF相关器件

与IRFU9014PBF相关文章

您还可以找

您在本页遇到什么问题？